2SK113Y Datasheet. Equivalente

 ..1. Size:88K  no
 2sk113r 2sk113o 2sk113y.pdf

 8.1. Size:60K  toshiba
 2sk1134.pdf

 8.2. Size:391K  nec
 2sk1132.pdf

 8.3. Size:363K  nec
 2sk1133.pdf

 8.4. Size:88K  interfet
 2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf

Databook.fxp 1/13/99 2 09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V 50 20 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS ( 20 V) ( 10 V) ( 30 V) (

 8.5. Size:910K  kexin
 2sk1133.pdf

SMD Type MOSFET N-Channel MOSFET 2SK1133 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 50V 1 2 ID = 100 mA +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 50 (VGS = 4V ) Complments the 2SJ166 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 50 V G

 8.6. Size:949K  kexin
 2sk1133-3.pdf

SMD Type MOSFET N-Channel MOSFET 2SK1133 SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 50V 1 2 ID = 100 mA +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 50 (VGS = 4V ) +0.1 1.9 -0.2 Complments the 2SJ166 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 5

 8.7. Size:202K  inchange semiconductor
 2sk1134.pdf

isc N-Channel MOSFET Transistor 2SK1134 DESCRIPTION Drain Current I =45A@ T =25 D C Drain Source Voltage- V =50V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 50 V