2SK1913 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1913 DESCRIPTION Drain Current ID= 4A@ TC=25 Drain Source Voltage- : VDSS=600V(Min) Fast Switching Speed APPLICATIONS High speed ,high current switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source V

FUJI POWER MOSFET2SK1917-MRN-CHANNEL SILICON POWER MOSFETF-II SERIESOutline DrawingsFeaturesHigh speed switchingTO-220F15Low on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeApplications Switching regulators2.54UPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-67Equivalent circuit schematicMax

isc N-Channel MOSFET Transistor 2SK1917DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UN

isc N-Channel MOSFET Transistor 2SK1917-MDESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc N-Channel MOSFET Transistor 2SK1916DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNIT