2SK1928 Todos los transistores

 

2SK1928 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1928

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 27 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.085 Ohm

Empaquetado / Estuche: TO220FL

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2SK1928 Datasheet (PDF)

1.1. 2sk1915 2sk1927 2sk1928.pdf Size:98K _update

2SK1928
2SK1928



4.1. 2sk1929.pdf Size:539K _update

2SK1928
2SK1928



4.2. 2sk192a.pdf Size:362K _toshiba

2SK1928
2SK1928

2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications Unit: mm VHF Band Amplifier Applications • High power gain: GPS = 24dB (typ.) (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Sy

 4.3. 2sk1922.pdf Size:109K _sanyo

2SK1928
2SK1928

Ordering number:EN4311 N-Channel Silicon MOSFET 2SK1922 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2052C High-speed diode (trr=100ns). [2SK1922] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta

4.4. 2sk1924.pdf Size:114K _sanyo

2SK1928
2SK1928

Ordering number:EN4313 N-Channel Silicon MOSFET 2SK1924 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2052C High-speed diode (trr=140ns). [2SK1924] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta

 4.5. 2sk1923.pdf Size:113K _sanyo

2SK1928
2SK1928

Ordering number:EN4312 N-Channel Silicon MOSFET 2SK1923 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2052C High-speed diode (trr=120ns). [2SK1923] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta

4.6. 2sk1920.pdf Size:93K _sanyo

2SK1928
2SK1928

Ordering number:EN4244A N-Channel Silicon MOSFET 2SK1920 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1920] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SK1920] 6.5 2.3 5.0 0.5 4 0.5 0.85

4.7. 2sk1921.pdf Size:89K _sanyo

2SK1928
2SK1928

Ordering number:EN4310 N-Channel Silicon MOSFET 2SK1921 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2052C Low-voltage drive. [2SK1921] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Par

4.8. 2sk1925.pdf Size:115K _sanyo

2SK1928
2SK1928

Ordering number:ENN4314 N-Channel Silicon MOSFET 2SK1925 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2056A High-speed diode (trr=150ns). [2SK1925] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 : Gate 0.6 2 : Drain 3 : Source 5.45 5.45 SANYO : TO-3PB Specifications Absolute Maximum Ratin

4.9. 2sk1922.pdf Size:216K _inchange_semiconductor

2SK1928
2SK1928

isc N-Channel MOSFET Transistor 2SK1922 DESCRIPTION ·Drain Current I = 2A@ T =25℃ D C ·Drain Source Voltage : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

4.10. 2sk1924.pdf Size:214K _inchange_semiconductor

2SK1928
2SK1928

isc N-Channel MOSFET Transistor 2SK1924 DESCRIPTION ·Drain Current I = 6A@ T =25℃ D C ·Drain Source Voltage : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 600 V

4.11. 2sk1923.pdf Size:214K _inchange_semiconductor

2SK1928
2SK1928

isc N-Channel MOSFET Transistor 2SK1923 DESCRIPTION ·Drain Current I = 4A@ T =25℃ D C ·Drain Source Voltage : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Chopper regulator and motor drive ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0

4.12. 2sk1925.pdf Size:217K _inchange_semiconductor

2SK1928
2SK1928

isc N-Channel MOSFET Transistor 2SK1925 DESCRIPTION ·Drain Current –I = 8A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 600

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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