2SK2225-80-E Todos los transistores

 ..1. Size:139K  renesas
 2sk2225-80-e.pdf

Data Sheet 2SK2225-80-E R07DS1275EJ0100 1500V - 2A - MOS FET Rev.1.00 Jun 22, 2015 High Speed Power Switching Features High breakdown voltage (V = 1500 V) DSS High speed switching Low drive current Outline RENESAS Package code PRSS0003ZD-A (Package name TO-3PF) D 1. Gate G 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item S

 7.1. Size:95K  renesas
 rej03g1005 2sk2225ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.2. Size:81K  renesas
 2sk2225.pdf

2SK2225 Silicon N Channel MOS FET REJ03G1005-0200 (Previous ADE-208-140) Rev.2.00 Sep 07, 2005 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package

 8.1. Size:412K  toshiba
 2sk2229.pdf

2SK2229 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2229 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem

 8.2. Size:544K  toshiba
 2sk2228.pdf

 8.3. Size:82K  sanyo
 2sk222.pdf

Ordering number EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features Package Dimensions Ultralow noise figure. unit mm Large yfs . 2019B Low gate leakage current. [2SK222] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Source 2 Gate 3 Drain 1 2 3 SANYO NP JEDEC TO-92 1.3 1.3 EIAJ SC-43 Specifications A

 8.4. Size:85K  renesas
 rej03g1004 2sk2220 2sk2221.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:72K  renesas
 2sk2220.pdf

2SK2220, 2SK2221 Silicon N Channel MOS FET REJ03G1004-0200 (Previous ADE-208-1352) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

 8.6. Size:174K  fuji
 2sk2223.pdf

N-channel MOS-FET 2SK2223-01R FAP-IIA Series 500V 0,76 10A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Eq

 8.7. Size:229K  fuji
 2sk2224-01r.pdf

FUJI POWER MOSFET 2SK2224-01R N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching 5.5 0.3 Low on-resistance 0.3 0.2 15.5 3.2 3.2+0.3 No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof 0.3 2.1 0.3 1.6 +0.2 1.1 0.1 0.2 3.5 Applications 0.2 0.2 5.45 5.45 0.6+0.2 Switc

 8.8. Size:55K  hitachi
 2sk2220 2sk2221.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.9. Size:61K  no
 2sk2222.pdf

 8.10. Size:211K  inchange semiconductor
 2sk2221.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2221 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High efficiency switch

 8.11. Size:222K  inchange semiconductor
 2sk2224-01.pdf

isc N-Channel MOSFET Transistor 2SK2224-01 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 8.12. Size:199K  inchange semiconductor
 2sk2223-01.pdf

isc N-Channel MOSFET Transistor 2SK2223-01 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor control UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAM