2SK2257-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2257-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO3P

Búsqueda de reemplazo de MOSFET 2SK2257-01

2SK2257-01 Datasheet (PDF)

..1. Size:178K fuji
2sk2257-01.pdf

..2. Size:222K inchange semiconductor
2sk2257-01.pdf

isc N-Channel MOSFET Transistor 2SK2257-01DESCRIPTIONDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYM

7.1. Size:221K inchange semiconductor
2sk2257.pdf

isc N-Channel MOSFET Transistor 2SK2257DESCRIPTIONDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

8.1. Size:169K fuji
2sk2253-01m.pdf

N-channel MOS-FET2SK2253-01MFAP-IIA Series 250V 0,5 8A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

8.2. Size:180K fuji
2sk2252-01l-01s.pdf

N-channel MOS-FET2SK2252-01L,SFAP-IIA Series 250V 0,5 8A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

8.3. Size:174K fuji
2sk2258-01.pdf

8.4. Size:201K fuji
2sk2255-01mr.pdf

2SK2255-01MR N-channel MOS-FETFAP-IIA Series 250V 0,18 18A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converterswww.DataSheet4U.com- General Purpose Power Amplifier> Maximum Ratings and

8.5. Size:178K fuji
2sk2251-01.pdf

N-channel MOS-FET2SK2251-01FAP-IIA Series 250V 2 2A 20W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equivale

8.6. Size:215K inchange semiconductor
2sk2253-01m.pdf

isc N-Channel MOSFET Transistor 2SK2253-01MDESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

8.7. Size:209K inchange semiconductor
2sk2258.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2258FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

8.8. Size:218K inchange semiconductor
2sk2251-01.pdf

isc N-Channel MOSFET Transistor 2SK2251-01DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

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