2SK402 Todos los transistores

 

2SK402 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK402
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.75 Ohm
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de MOSFET 2SK402

 

2SK402 Datasheet (PDF)

 ..1. Size:247K  hitachi
2sk402 2sk403.pdf

2SK402
2SK402

"2SK402""2SK402""2SK402"

 ..2. Size:234K  inchange semiconductor
2sk402.pdf

2SK402
2SK402

isc N-Channel MOSFET Transistor 2SK402DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching.High Cutoff frequency.No secondary breakdown.Suitable for switching reg

 0.1. Size:767K  toshiba
2sk4020.pdf

2SK402
2SK402

2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications MAX 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 0.56 (typ.) High forward transfer admittance : |Yfs| = 4.5

 0.2. Size:271K  toshiba
2sk4021.pdf

2SK402
2SK402

2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4021 Switching Regulator and DC/DC Converter Applications Unit: mmMotor Drive Applications MAX Low drain-source ON-resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.)

 0.3. Size:210K  toshiba
2sk4026.pdf

2SK402
2SK402

2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4026 Switching Regulator Applications Unit: mm MAXFeatures Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS

 0.4. Size:215K  toshiba
2sk4023.pdf

2SK402
2SK402

2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4023 Switching Regulator, DC/DC Converter Unit: mm MAX 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: ID

 0.5. Size:208K  toshiba
2sk4022.pdf

2SK402
2SK402

2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4022 Switching Regulator, DC/DC Converter and Unit: mmMotor Drive Applications MAX 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ

 0.6. Size:156K  nec
2sk4027.pdf

2SK402
2SK402

DATA SHEETwww.DataSheet4U.comJUNCTION FIELD EFFECT TRANSISTOR2SK4027N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK4027 is suitable for converter of ECM. +0.1 +0.10.4 0.050.16 0.06FEATURES High gain Marking -1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) Low noise 3 -

 0.7. Size:354K  inchange semiconductor
2sk4020.pdf

2SK402
2SK402

isc N-Channel MOSFET Transistor 2SK4020FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.8. Size:354K  inchange semiconductor
2sk4021.pdf

2SK402
2SK402

isc N-Channel MOSFET Transistor 2SK4021FEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.9. Size:354K  inchange semiconductor
2sk4026.pdf

2SK402
2SK402

isc N-Channel MOSFET Transistor 2SK4026FEATURESDrain Current : I = 1.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.10. Size:354K  inchange semiconductor
2sk4023.pdf

2SK402
2SK402

isc N-Channel MOSFET Transistor 2SK4023FEATURESDrain Current : I = 1.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 4.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.11. Size:353K  inchange semiconductor
2sk4022.pdf

2SK402
2SK402

isc N-Channel MOSFET Transistor 2SK4022FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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