2SK402 Todos los transistores

 ..1. Size:247K  hitachi
 2sk402 2sk403.pdf

"2SK402" "2SK402" "2SK402"

 ..2. Size:234K  inchange semiconductor
 2sk402.pdf

isc N-Channel MOSFET Transistor 2SK402 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching reg

 0.1. Size:767K  toshiba
 2sk4020.pdf

2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Unit mm Applications MAX 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.56 (typ.) High forward transfer admittance Yfs = 4.5

 0.2. Size:271K  toshiba
 2sk4021.pdf

2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4021 Switching Regulator and DC/DC Converter Applications Unit mm Motor Drive Applications MAX Low drain-source ON-resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.)

 0.3. Size:210K  toshiba
 2sk4026.pdf

2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4026 Switching Regulator Applications Unit mm MAX Features Low drain-source ON-resistance RDS (ON) = 6.4 (typ.) High forward transfer admittance Yfs = 0.85 S (typ.) Low leakage current IDSS

 0.4. Size:215K  toshiba
 2sk4023.pdf

2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4023 Switching Regulator, DC/DC Converter Unit mm MAX 4 V gate drive Low drain-source ON-resistance RDS (ON) = 4.0 (typ.) High forward transfer admittance Yfs = 0.8 S (typ.) Low leakage current ID

 0.5. Size:208K  toshiba
 2sk4022.pdf

2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK4022 Switching Regulator, DC/DC Converter and Unit mm Motor Drive Applications MAX 4 V gate drive Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.2 S (typ

 0.6. Size:156K  nec
 2sk4027.pdf

DATA SHEET www.DataSheet4U.com JUNCTION FIELD EFFECT TRANSISTOR 2SK4027 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK4027 is suitable for converter of ECM. +0.1 +0.1 0.4 0.05 0.16 0.06 FEATURES High gain Marking -1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 k ) Low noise 3 -

 0.7. Size:354K  inchange semiconductor
 2sk4020.pdf

isc N-Channel MOSFET Transistor 2SK4020 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.8. Size:354K  inchange semiconductor
 2sk4021.pdf

isc N-Channel MOSFET Transistor 2SK4021 FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.9. Size:354K  inchange semiconductor
 2sk4026.pdf

isc N-Channel MOSFET Transistor 2SK4026 FEATURES Drain Current I = 1.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 9.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.10. Size:354K  inchange semiconductor
 2sk4023.pdf

isc N-Channel MOSFET Transistor 2SK4023 FEATURES Drain Current I = 1.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 4.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.11. Size:353K  inchange semiconductor
 2sk4022.pdf

isc N-Channel MOSFET Transistor 2SK4022 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno