2SK891 Todos los transistores

 ..1. Size:53K  toshiba
 2sk891.pdf

 ..2. Size:288K  inchange semiconductor
 2sk891.pdf

isc N-Channel MOSFET Transistor 2SK891 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.1. Size:132K  1
 2sk895 2sk896.pdf

 9.2. Size:168K  1
 2sk899.pdf

 9.3. Size:134K  1
 2sk897-mr.pdf

 9.4. Size:87K  toshiba
 2sk890.pdf

www.DataSheet4U.com

 9.5. Size:57K  toshiba
 2sk894.pdf

 9.6. Size:137K  fuji
 2sk897-m.pdf

"2SK897M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M" Powered by ICminer.com Electronic-Library Service CopyRight 2003

 9.7. Size:59K  inchange semiconductor
 2sk892.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK892 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM R

 9.8. Size:303K  inchange semiconductor
 2sk895.pdf

isc N-Channel MOSFET Transistor 2SK895 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.9. Size:234K  inchange semiconductor
 2sk899.pdf

isc N-Channel MOSFET Transistor 2SK899 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 9.10. Size:303K  inchange semiconductor
 2sk896.pdf

isc N-Channel MOSFET Transistor 2SK896 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.11. Size:59K  inchange semiconductor
 2sk893.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK893 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS=500V(Min) Fast Switching Speed APPLICATIONS High voltage. high speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GS V G

 9.12. Size:279K  inchange semiconductor
 2sk897-mr.pdf

isc N-Channel MOSFET Transistor 2SK897-MR FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage V = 550V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.13. Size:198K  inchange semiconductor
 2sk894.pdf

isc N-Channel MOSFET Transistor 2SK894 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage. high speed power Switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vo