2SK807 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK807

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 60* nS

Conductancia de drenaje-sustrato (Cd): 175 pF

Resistencia drenaje-fuente RDS(on): 1.7 Ohm

Empaquetado / Estuche: TO220FP

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2SK807 Datasheet (PDF)

1.1. 2sk807.pdf Size:141K _update

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1.2. 2sk807.pdf Size:197K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK807 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.1. 2sk801.pdf Size:154K _nec

5.2. 2sk800.pdf Size:146K _nec

5.3. 2sk806.pdf Size:61K _panasonic

5.4. 2sk809.pdf Size:66K _panasonic

5.5. 2sk808.pdf Size:208K _no

5.6. 2sk805.pdf Size:82K _no

5.7. 2sk803.pdf Size:199K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK803 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V =160V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 160 V DSS GS V Gate-Source

5.8. 2sk804.pdf Size:195K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK804 DESCRIPTION ·Drain Current –I =20A@ T =25℃ D C ·Drain Source Voltage- : V =150V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 150

5.9. 2sk806.pdf Size:201K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK806 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.10. 2sk809a.pdf Size:197K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK809A DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.11. 2sk808a.pdf Size:201K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK808A DESCRIPTION ·Drain Current –I =1A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.12. 2sk808.pdf Size:201K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK808 DESCRIPTION ·Drain Current –I =1A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.13. 2sk809.pdf Size:197K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK809 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.14. 2sk805.pdf Size:197K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK805 DESCRIPTION ·Drain Current –I =20A@ T =25℃ D C ·Drain Source Voltage- : V =200V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM

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