2SK1012-01 Todos los transistores

 ..1. Size:169K  fuji
 2sk1012-01.pdf

 7.1. Size:203K  inchange semiconductor
 2sk1012.pdf

isc N-Channel MOSFET Transistor 2SK1012 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS G

 8.1. Size:244K  1
 2sk1017.pdf

FUJI POWER MOSFET 2SK1017 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings and

 8.2. Size:220K  1
 2sk1019.pdf

FUJI POWER MOSFET 2SK1019 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3PL 0.3 Low on-resistance 0.2 20.5 Max 5 3.2 No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee 2 3 0.2 0.2 1.1 0.2 Applications 0.3 3.0 0.2 Switching regulators 0.6+0.2 5.45 0.2 5.45 UPS 1. Gate 2. Drain DC-DC co

 8.3. Size:134K  fuji
 2sk1011-01.pdf

 8.4. Size:57K  fuji
 2sk1018.pdf

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 2sk1013-01.pdf

 8.6. Size:173K  fuji
 2sk1015-01.pdf

 8.7. Size:254K  fuji
 2sk1014-01.pdf

FUJI POWER MOSFET 2SK1014-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings

 8.8. Size:1624K  fuji
 2sk1016.pdf

 8.9. Size:167K  fuji
 2sk1010-01.pdf

 8.10. Size:138K  fuji
 2sk1017-01.pdf

 8.11. Size:176K  fuji
 2sk1016-01.pdf

 8.12. Size:203K  inchange semiconductor
 2sk1014.pdf

isc N-Channel MOSFET Transistor 2SK1014 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

 8.13. Size:203K  inchange semiconductor
 2sk1018.pdf

isc N-Channel MOSFET Transistor 2SK1018 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

 8.14. Size:202K  inchange semiconductor
 2sk1011.pdf

isc N-Channel MOSFET Transistor 2SK1011 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G

 8.15. Size:199K  inchange semiconductor
 2sk1010.pdf

isc N-Channel MOSFET Transistor 2SK1010 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

 8.16. Size:203K  inchange semiconductor
 2sk1017.pdf

isc N-Channel MOSFET Transistor 2SK1017 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

 8.17. Size:203K  inchange semiconductor
 2sk1016.pdf

isc N-Channel MOSFET Transistor 2SK1016 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

 8.18. Size:203K  inchange semiconductor
 2sk1013.pdf

isc N-Channel MOSFET Transistor 2SK1013 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G

 8.19. Size:63K  inchange semiconductor
 2sk1015.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GS V Gate-Source Voltage 30 V G

 8.20. Size:200K  inchange semiconductor
 2sk1019.pdf

isc N-Channel MOSFET Transistor 2SK1019 DESCRIPTION Drain Current I =35A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS