2SK1014-01 Todos los transistores

 

2SK1014-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1014-01

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 110 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.74 Ohm

Empaquetado / Estuche: TO3P

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2SK1014-01 Datasheet (PDF)

0.1. 2sk1014-01.pdf Size:254K _fuji

2SK1014-01
2SK1014-01

FUJI POWER MOSFET2SK1014-01N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-65Equivalent circuit schematicMaximum ratings

7.1. 2sk1014.pdf Size:203K _inchange_semiconductor

2SK1014-01
2SK1014-01

isc N-Channel MOSFET Transistor 2SK1014DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS

 8.1. 2sk1017.pdf Size:244K _1

2SK1014-01
2SK1014-01

FUJI POWER MOSFET2SK1017N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-65Equivalent circuit schematicMaximum ratings and

8.2. 2sk1019.pdf Size:220K _1

2SK1014-01
2SK1014-01

FUJI POWER MOSFET2SK1019N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PL0.3Low on-resistance 0.220.5 Max 53.2No secondary breakdownLow driving powerHigh voltageVGSS= 30V Guarantee230.2 0.21.10.2Applications0.33.00.2 Switching regulators 0.6+0.25.450.2 5.45UPS1. Gate2. Drain DC-DC co

 8.3. 2sk1015-01.pdf Size:173K _fuji

2SK1014-01
2SK1014-01

8.4. 2sk1013-01.pdf Size:133K _fuji

2SK1014-01
2SK1014-01

 8.5. 2sk1016.pdf Size:1624K _fuji

2SK1014-01
2SK1014-01

8.6. 2sk1010-01.pdf Size:167K _fuji

2SK1014-01
2SK1014-01

8.7. 2sk1017-01.pdf Size:138K _fuji

2SK1014-01
2SK1014-01

8.8. 2sk1016-01.pdf Size:176K _fuji

2SK1014-01
2SK1014-01

8.9. 2sk1011-01.pdf Size:134K _fuji

2SK1014-01
2SK1014-01

8.10. 2sk1012-01.pdf Size:169K _fuji

2SK1014-01
2SK1014-01

8.11. 2sk1018.pdf Size:57K _fuji

2SK1014-01

8.12. 2sk1011.pdf Size:202K _inchange_semiconductor

2SK1014-01
2SK1014-01

isc N-Channel MOSFET Transistor 2SK1011DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G

8.13. 2sk1015.pdf Size:63K _inchange_semiconductor

2SK1014-01
2SK1014-01

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GSV Gate-Source Voltage 30 V G

8.14. 2sk1010.pdf Size:199K _inchange_semiconductor

2SK1014-01
2SK1014-01

isc N-Channel MOSFET Transistor 2SK1010DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

8.15. 2sk1016.pdf Size:203K _inchange_semiconductor

2SK1014-01
2SK1014-01

isc N-Channel MOSFET Transistor 2SK1016DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS

8.16. 2sk1013.pdf Size:203K _inchange_semiconductor

2SK1014-01
2SK1014-01

isc N-Channel MOSFET Transistor 2SK1013DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G

8.17. 2sk1012.pdf Size:203K _inchange_semiconductor

2SK1014-01
2SK1014-01

isc N-Channel MOSFET Transistor 2SK1012DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS G

8.18. 2sk1017.pdf Size:203K _inchange_semiconductor

2SK1014-01
2SK1014-01

isc N-Channel MOSFET Transistor 2SK1017DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

8.19. 2sk1018.pdf Size:203K _inchange_semiconductor

2SK1014-01
2SK1014-01

isc N-Channel MOSFET Transistor 2SK1018DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS

8.20. 2sk1019.pdf Size:200K _inchange_semiconductor

2SK1014-01
2SK1014-01

isc N-Channel MOSFET Transistor 2SK1019DESCRIPTIONDrain Current I =35A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

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