2SK1014-01 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1014-01  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.74 Ohm

Encapsulados: TO3P

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2SK1014-01 datasheet

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 2sk1014-01.pdf pdf_icon

2SK1014-01

FUJI POWER MOSFET 2SK1014-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings

 7.1. Size:203K  inchange semiconductor
 2sk1014.pdf pdf_icon

2SK1014-01

isc N-Channel MOSFET Transistor 2SK1014 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

 8.1. Size:244K  1
 2sk1017.pdf pdf_icon

2SK1014-01

FUJI POWER MOSFET 2SK1017 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings and

 8.2. Size:220K  1
 2sk1019.pdf pdf_icon

2SK1014-01

FUJI POWER MOSFET 2SK1019 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3PL 0.3 Low on-resistance 0.2 20.5 Max 5 3.2 No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee 2 3 0.2 0.2 1.1 0.2 Applications 0.3 3.0 0.2 Switching regulators 0.6+0.2 5.45 0.2 5.45 UPS 1. Gate 2. Drain DC-DC co

MOSTRAR MÁS

Otros transistores... 2SK818, 2SK818A, 2SK951-M, 2SK956-01R, 2SK957-M, 2SK957-MR, 2SK1011-01, 2SK1012-01, IRF1405, 2SK1015, 2SK1015-01, 2SK1016-01, 2SK1017-01, 2SK1018, 2SK1020, 2SK1021, 2SK1022