2SK1015-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GSV Gate-Source Voltage 30 V G

FUJI POWER MOSFET2SK1017N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-65Equivalent circuit schematicMaximum ratings and

FUJI POWER MOSFET2SK1019N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PL0.3Low on-resistance 0.220.5 Max 53.2No secondary breakdownLow driving powerHigh voltageVGSS= 30V Guarantee230.2 0.21.10.2Applications0.33.00.2 Switching regulators 0.6+0.25.450.2 5.45UPS1. Gate2. Drain DC-DC co

FUJI POWER MOSFET2SK1014-01N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-65Equivalent circuit schematicMaximum ratings

isc N-Channel MOSFET Transistor 2SK1014DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS

isc N-Channel MOSFET Transistor 2SK1018DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS

isc N-Channel MOSFET Transistor 2SK1011DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G

isc N-Channel MOSFET Transistor 2SK1010DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

isc N-Channel MOSFET Transistor 2SK1017DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

isc N-Channel MOSFET Transistor 2SK1016DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS

isc N-Channel MOSFET Transistor 2SK1013DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G

isc N-Channel MOSFET Transistor 2SK1012DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS G

isc N-Channel MOSFET Transistor 2SK1019DESCRIPTIONDrain Current I =35A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS