2SK2134-Z
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2134-Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 200
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 13
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45
nS
Cossⓘ - Capacitancia
de salida: 230
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4
Ohm
Paquete / Cubierta:
TO263
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2SK2134-Z
Datasheet (PDF)
8.4. Size:124K 1
2sk2137.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2137SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2137 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-Resistance2SK2137: RDS(on) = 2.4 (VGS = 10 V, ID = 2.0 A) Low Cis
8.6. Size:135K 1
2sk2138 2sk2138-z.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2138, 2SK2138-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 2.4 MAX.
8.7. Size:71K renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. Size:111K nec
2sk2139.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2139SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2139 is N-Channel Power MOS Field Effect Transistor(in millimeters)designed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-ResistanceRDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) Low Cis
8.10. Size:31K panasonic
2sk2130.pdf
Power F-MOS FETs 2SK21302SK2130Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 45nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive
8.11. Size:33K hitachi
2sk213 2sk214 2sk215 2sk216.pdf
2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D
Otros transistores... 2SK1021
, 2SK1022
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.
History: IRFZ44PBF
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