2SK2315 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to

2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2313 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 8 m (typ.) High forward transfer admittance : |Yfs| = 60 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :

2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2314 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 66 m (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 100 V) Enhancement mode

2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2311 Chopper Regulator, DC-DC Converter and Switching Unit: mm Regulator Applications 4 V gate drive Low drain-source ON resistance : R = 36 m (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS En

2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2312 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 13 m (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :

Ordering number : EN5300AN-Channel Silicon MOSFET2SK2316Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON resistance.unit: mm Ultrahigh-speed switching.2062A-PCP Low-voltage drive (2.5V drive).[2SK2316]1 : Gate2 : Drain3 : SourceSANYO: PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condition

Ordering number:ENN5058N-Channel Silicon MOSFET2SK2317Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 2.5V drive.[2SK2317]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK2317]6.5 2.35.0 0.540.50.85

isc N-Channel MOSFET Transistor 2SK2313DESCRIPTIONDrain Current ID=60A@ TC=25Drain Source Voltage-: VDSS=60V(Min)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,Chopper regulator,DC-DC converter and motor driv