2SK3306B Todos los transistores

 ..1. Size:288K  renesas
 2sk3306b.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:69K  1
 2sk3306.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristics, and 2SK3306 Isolated TO-220 (MP-45F) designed for high voltage applications such as switching power supply, AC adapter.

 7.2. Size:278K  inchange semiconductor
 2sk3306.pdf

isc N-Channel MOSFET Transistor 2SK3306 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:76K  1
 2sk3305-s 2sk3305 2sk3305-zj.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3305 is N-Channel DMOS FET device that features a PART NUMBER PACKAGE low gate charge and excellent switching characteristics, and 2SK3305 TO-220AB designed for high voltage applications such as switching power 2SK3305-S TO-262 supply, AC adapter.

 8.2. Size:218K  toshiba
 2sk330.pdf

 8.3. Size:220K  toshiba
 2sk3309.pdf

2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3309 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 4.3 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement-mode Vth = 3.0 5.0 V (VDS = 10 V, ID = 1 mA) Absolute

 8.4. Size:191K  toshiba
 2sk3302.pdf

2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit mm Low drain-source ON resistance RDS (ON) = 11.5 (typ.) High forward transfer admittance Yfs = 0.4 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V,

 8.5. Size:142K  toshiba
 2sk3301.pdf

 8.6. Size:67K  nec
 2sk3304.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3304 is N-Channel MOS FET device that features a PART NUMBER PACKAGE Low gate charge and excellent switching characteristics, and 2SK3304 TO-3P designed for high voltage applications such as switching power supply. FEATURES (TO-3P) Low gate c

 8.7. Size:66K  nec
 2sk3307.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3307 TO-3P FEATURES Super low on-state resistance RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 35 A) (TO-3P) RDS(on)2 = 14

 8.8. Size:43K  kexin
 2sk3305.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3305 TO-263 Unit mm +0.2 Features 4.57-0.2 +0.1 1.27-0.1 Low gate charge QG = 13 nC TYP. (VDD = 400V, VGS =10 V, ID =5.0A) Gate voltage rating 30 V +0.1 0.1max 1.27-0.1 Low on-state resistance +0.1 RDS(on) =1.5 MAX. (VGS =10V, ID =2.5A) 0.81-0.1 2.54 Avalanche capability ratings 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.

 8.9. Size:1529K  kexin
 2sk3305-zj.pdf

SMD Type MOSFET N-Channel MOSFET 2SK3305-ZJ Features VDS S = 500V ID = 5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Gate voltage rating 30 V Avalanche capability ratings Drain (D) Body Gate (G) Diode Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 30 Con

 8.10. Size:288K  inchange semiconductor
 2sk3305.pdf

isc N-Channel MOSFET Transistor 2SK3305 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.11. Size:356K  inchange semiconductor
 2sk3305-zj.pdf

isc N-Channel MOSFET Transistor 2SK3305-ZJ FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.12. Size:286K  inchange semiconductor
 2sk3301d.pdf

isc N-Channel MOSFET Transistor 2SK3301D FEATURES Drain Current I = 1A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 20 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.13. Size:357K  inchange semiconductor
 2sk3309b.pdf

isc N-Channel MOSFET Transistor 2SK3309B FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.14. Size:283K  inchange semiconductor
 2sk3309k.pdf

isc N-Channel MOSFET Transistor 2SK3309K FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.15. Size:282K  inchange semiconductor
 2sk3305-s.pdf

isc N-Channel MOSFET Transistor 2SK3305-S FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.16. Size:287K  inchange semiconductor
 2sk3307.pdf

isc N-Channel MOSFET Transistor 2SK3307 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.17. Size:354K  inchange semiconductor
 2sk3301i.pdf

isc N-Channel MOSFET Transistor 2SK3301I FEATURES Drain Current I = 1A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 20 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr