2SK3318 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3318
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
   Paquete / Cubierta: TOP3F

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2SK3318 Datasheet (PDF)

..1. Size:213K panasonic
2sk3318.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3318Silicon N-channel power MOSFETUnit: mm15.00.3 5.00.2For switching11.00.2 (3.2) Features 3.20.1 Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron2.00.2 2.00.1 No secondary breakdown1.10.1 0.60.2 Absolute Maximum Rati

8.1. Size:318K toshiba
2sk3312.pdf

2SK3312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (--MOSV) 2SK3312 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 3.0~5.0 V (VDS

8.2. Size:191K toshiba
2sk3310.pdf

2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3310 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolut

8.3. Size:865K toshiba
2sk3316.pdf

2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3316 Switching Regulator Applications Unit: mm Fast reverse recovery time : trr = 60 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance : RDS (ON) = 1.6 (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current : IDSS = 100 A (m

8.4. Size:285K toshiba
2sk3313.pdf

8.5. Size:709K toshiba
2sk3314.pdf

2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3314 Chopper Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Fast reverse recovery time : trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance : RDS (ON) = 0.35 (typ.) High forward transfer admittance : |Yfs| = 9.9 S (ty

8.6. Size:279K inchange semiconductor
2sk3310.pdf

isc N-Channel MOSFET Transistor 2SK3310FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.7. Size:279K inchange semiconductor
2sk3316.pdf

isc N-Channel MOSFET Transistor 2SK3316FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.8. Size:356K inchange semiconductor
2sk3312b.pdf

isc N-Channel MOSFET Transistor 2SK3312BFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.9. Size:279K inchange semiconductor
2sk3313.pdf

isc N-Channel MOSFET Transistor 2SK3313FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.62(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.10. Size:287K inchange semiconductor
2sk3314.pdf

isc N-Channel MOSFET Transistor 2SK3314FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.49(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.11. Size:282K inchange semiconductor
2sk3312k.pdf

isc N-Channel MOSFET Transistor 2SK3312KFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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