2SK3325 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3325
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 85 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 11 nS
Cossⓘ - Capacitancia de salida: 190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de 2SK3325 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3325 datasheet
..1. Size:77K 1
2sk3325 2sk3325-s 2sk3325-zj.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3325 is N-Channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristics, and 2SK3325 TO-220AB designed for high voltage applications such as switching power 2SK3325-S TO-262 supply, AC adapter.
..2. Size:43K kexin
2sk3325.pdf
SMD Type IC SMD Type Transistors MOS Field Effect Transistor 2SK3325 TO-263 Unit mm +0.2 Features 4.57-0.2 1.27+0.1 -0.1 Low gate charge QG = 22 nC TYP. (VDD = 400 V, VGS =10V, ID =10A) Gate voltage rating 30 V Low on-state resistance 0.1max 1.27+0.1 -0.1 RDS(on) =0.85 MAX. (VGS =10V, ID =5.0 A) +0.1 Avalanche capability ratings 0.81-0.1 2.54 1Gate 2.54+0.2 +0.2 -0.
..3. Size:288K inchange semiconductor
2sk3325.pdf
isc N-Channel MOSFET Transistor 2SK3325 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
0.1. Size:356K inchange semiconductor
2sk3325-zj.pdf
isc N-Channel MOSFET Transistor 2SK3325-ZJ FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
0.2. Size:282K inchange semiconductor
2sk3325-s.pdf
isc N-Channel MOSFET Transistor 2SK3325-S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.1. Size:91K 1
2sk3322 2sk3322-s 2sk3322-zj 2sk3322-zk.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE The 2SK3322 is N-Channel DMOS FET device that 2SK3322 TO-220AB (MP-25) features a low gate charge and excellent switching 2SK3322-S TO-262 characteristics, and designed for high voltage 2SK3322-ZJ TO-263(MP-25ZJ) applications such as switch
8.2. Size:305K toshiba
2sk3320 .pdf
2SK3320 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications Unit mm Two devices in a ultra super mini (five pins) package High Yfs Yfs = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage VGDS = -50 V Super low noise NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k )
8.3. Size:305K toshiba
2sk3320.pdf
2SK3320 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications Unit mm Two devices in a ultra super mini (five pins) package High Yfs Yfs = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage VGDS = -50 V Super low noise NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k )
8.4. Size:230K renesas
2sk3326.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:278K renesas
2sk3324.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:257K renesas
2sk3326b.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.7. Size:43K kexin
2sk3322.pdf
SMD Type MOSFET MOS Field Effect Transistor 2SK3322 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS =10 V, ID =5.5A) Gate voltage rating 30 V +0.1 0.1max 1.27-0.1 Low on-state resistance RDS(on) =2.2 MAX. (VGS =10V, ID =2.8A) +0.1 0.81-0.1 2.54 Avalanche capability ratings 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.
8.8. Size:279K inchange semiconductor
2sk3326.pdf
isc N-Channel MOSFET Transistor 2SK3326 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.9. Size:357K inchange semiconductor
2sk3322-zj.pdf
isc N-Channel MOSFET Transistor 2SK3322-ZJ FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.10. Size:282K inchange semiconductor
2sk3322-s.pdf
isc N-Channel MOSFET Transistor 2SK3322-S FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.11. Size:288K inchange semiconductor
2sk3322.pdf
isc N-Channel MOSFET Transistor 2SK3322 FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.12. Size:357K inchange semiconductor
2sk3322-zk.pdf
isc N-Channel MOSFET Transistor 2SK3322-ZK FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
Otros transistores... 2SK3230
, 2SK325
, 2SK3305
, 2SK3306B
, 2SK3318
, 2SK3320
, 2SK3322
, 2SK3324
, IRF640N
, 2SK3326B
, 2SK3333
, 2SK3338-01
, 2SK3353
, 2SK3353-S
, 2SK3353-Z
, 2SK3354-S
, 2SK3354-Z
.
