2SK3325 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3325
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 85 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 2.5 V
Carga de la puerta (Qg): 22 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 190 pF
Resistencia entre drenaje y fuente RDS(on): 0.85 Ohm
Paquete / Cubierta: TO263
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2SK3325 Datasheet (PDF)
2sk3325 2sk3325-s 2sk3325-zj.pdf
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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3325SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3325 is N-Channel DMOS FET device that featuresPART NUMBER PACKAGEa low gate charge and excellent switching characteristics, and2SK3325 TO-220ABdesigned for high voltage applications such as switching power2SK3325-S TO-262supply, AC adapter.
2sk3325.pdf
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SMD Type ICSMD Type TransistorsMOS Field Effect Transistor2SK3325TO-263Unit: mm+0.2Features4.57-0.21.27+0.1-0.1Low gate charge:QG = 22 nC TYP. (VDD = 400 V, VGS =10V, ID =10A)Gate voltage rating: 30 VLow on-state resistance0.1max1.27+0.1-0.1RDS(on) =0.85MAX. (VGS =10V, ID =5.0 A)+0.1Avalanche capability ratings0.81-0.12.541Gate2.54+0.2 +0.2-0.
2sk3325.pdf
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isc N-Channel MOSFET Transistor 2SK3325FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3325-zj.pdf
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isc N-Channel MOSFET Transistor 2SK3325-ZJFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3325-s.pdf
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isc N-Channel MOSFET Transistor 2SK3325-SFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3322 2sk3322-s 2sk3322-zj 2sk3322-zk.pdf
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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3322SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE The 2SK3322 is N-Channel DMOS FET device that 2SK3322 TO-220AB (MP-25)features a low gate charge and excellent switching 2SK3322-S TO-262characteristics, and designed for high voltage 2SK3322-ZJ TO-263(MP-25ZJ)applications such as switch
2sk3320 .pdf
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2SK3320 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications Unit: mm Two devices in a ultra super mini (five pins) package High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = -50 V Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
2sk3320.pdf
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2SK3320 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications Unit: mm Two devices in a ultra super mini (five pins) package High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = -50 V Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
2sk3326.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3324.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3326b.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3322.pdf
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SMD Type MOSFETMOS Field Effect Transistor2SK3322TO-263Unit: mmFeatures +0.24.57-0.2+0.11.27-0.1Low gate chargeQG = 15 nC TYP. (VDD = 450V, VGS =10 V, ID =5.5A)Gate voltage rating 30 V+0.10.1max1.27-0.1Low on-state resistanceRDS(on) =2.2 MAX. (VGS =10V, ID =2.8A)+0.10.81-0.12.54Avalanche capability ratings1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.
2sk3326.pdf
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isc N-Channel MOSFET Transistor 2SK3326FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3322-zj.pdf
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isc N-Channel MOSFET Transistor 2SK3322-ZJFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3322-s.pdf
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isc N-Channel MOSFET Transistor 2SK3322-SFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3322.pdf
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isc N-Channel MOSFET Transistor 2SK3322FEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3322-zk.pdf
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isc N-Channel MOSFET Transistor 2SK3322-ZKFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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