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2SK3353-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3353-Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 95 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 82 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 90 nC
   trⓘ - Tiempo de subida: 1550 nS
   Cossⓘ - Capacitancia de salida: 780 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: TO263

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2SK3353-Z Datasheet (PDF)

 ..1. Size:357K  inchange semiconductor
2sk3353-z.pdf

2SK3353-Z
2SK3353-Z

isc N-Channel MOSFET Transistor 2SK3353-ZFEATURESDrain Current : I = 82A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 6.1. Size:39K  nec
2sk3353-s-z.pdf

2SK3353-Z
2SK3353-Z

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3353SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3353 TO-220AB2SK3353-S TO-262FEATURES2SK3353-Z TO-220SMD Super low on-state resistance: RDS(on)1 = 9.5 m MAX. (VGS

 6.2. Size:283K  inchange semiconductor
2sk3353-s.pdf

2SK3353-Z
2SK3353-Z

isc N-Channel MOSFET Transistor 2SK3353-SFEATURESDrain Current : I = 82A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 7.1. Size:289K  inchange semiconductor
2sk3353.pdf

2SK3353-Z
2SK3353-Z

isc N-Channel MOSFET Transistor 2SK3353FEATURESDrain Current : I = 82A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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