2SK3355 Todos los transistores

 ..1. Size:214K  renesas
 2sk3355.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..2. Size:289K  inchange semiconductor
 2sk3355.pdf

isc N-Channel MOSFET Transistor 2SK3355 FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.1. Size:214K  renesas
 2sk3355-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:283K  inchange semiconductor
 2sk3355-s.pdf

isc N-Channel MOSFET Transistor 2SK3355-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.3. Size:357K  inchange semiconductor
 2sk3355-zj.pdf

isc N-Channel MOSFET Transistor 2SK3355-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.4. Size:357K  inchange semiconductor
 2sk3355-z.pdf

isc N-Channel MOSFET Transistor 2SK3355-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid