2SK4080-ZK-E1-AY Todos los transistores

 6.1. Size:256K  renesas
 2sk4080-s27-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:355K  inchange semiconductor
 2sk4080.pdf

isc N-Channel MOSFET Transistor 2SK4080 FEATURES Drain Current I = 53A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 90m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:64K  1
 2sk4086ls.pdf

Ordering number ENA0554D 2SK4086LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4086LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specificatio

 8.2. Size:233K  1
 2sk4081.pdf

 8.3. Size:67K  sanyo
 2sk4087ls.pdf

Ordering number ENA0555B 2SK4087LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4087LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specificatio

 8.4. Size:67K  sanyo
 2sk4088ls.pdf

Ordering number ENA0556B 2SK4088LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4088LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specificatio

 8.5. Size:66K  sanyo
 2sk4085ls.pdf

Ordering number ENA0553B 2SK4085LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4085LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specificatio

 8.6. Size:67K  sanyo
 2sk4089ls.pdf

Ordering number ENA0557A 2SK4089LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4089LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specificatio

 8.7. Size:54K  sanyo
 2sk4084ls.pdf

Ordering number ENA0552B 2SK4084LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4084LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specificatio

 8.8. Size:290K  renesas
 2sk4082-s17.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:280K  inchange semiconductor
 2sk4087ls.pdf

isc N-Channel MOSFET Transistor 2SK4087LS FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.61 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.10. Size:287K  inchange semiconductor
 2sk4081d.pdf

isc N-Channel MOSFET Transistor 2SK4081D FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 5.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.11. Size:280K  inchange semiconductor
 2sk4088ls.pdf

isc N-Channel MOSFET Transistor 2SK4088LS FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.12. Size:355K  inchange semiconductor
 2sk4081i.pdf

isc N-Channel MOSFET Transistor 2SK4081I FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 5.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.13. Size:280K  inchange semiconductor
 2sk4082.pdf

isc N-Channel MOSFET Transistor 2SK4082 FEATURES Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.14. Size:280K  inchange semiconductor
 2sk4086ls.pdf

isc N-Channel MOSFET Transistor 2SK4086LS FEATURES Drain Current I = 11.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.15. Size:279K  inchange semiconductor
 2sk4085ls.pdf

isc N-Channel MOSFET Transistor 2SK4085LS FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.16. Size:280K  inchange semiconductor
 2sk4089ls.pdf

isc N-Channel MOSFET Transistor 2SK4089LS FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.17. Size:279K  inchange semiconductor
 2sk4084ls.pdf

isc N-Channel MOSFET Transistor 2SK4084LS FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole