2SK552 Todos los transistores

 

2SK552 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK552
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de MOSFET 2SK552

 

2SK552 Datasheet (PDF)

 ..1. Size:248K  hitachi
2sk552 2sk553.pdf

2SK552 2SK552

 9.1. Size:247K  hitachi
2sk554 2sk555.pdf

2SK552 2SK552

 9.2. Size:521K  hitachi
2sk55.pdf

2SK552 2SK552

 9.3. Size:251K  hitachi
2sk556 2sk557.pdf

2SK552 2SK552

 9.4. Size:184K  no
2sk559 2sk560.pdf

2SK552 2SK552

 9.5. Size:231K  inchange semiconductor
2sk556.pdf

2SK552 2SK552

isc N-Channel MOSFET Transistor 2SK556DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

 9.6. Size:236K  inchange semiconductor
2sk557.pdf

2SK552 2SK552

isc N-Channel MOSFET Transistor 2SK557DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

 9.7. Size:239K  inchange semiconductor
2sk559.pdf

2SK552 2SK552

isc N-Channel MOSFET Transistor 2SK559DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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