IRF9612 Todos los transistores

 

IRF9612 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9612
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 20 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 1.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 50 pF
   Resistencia entre drenaje y fuente RDS(on): 4.5 Ohm
   Paquete / Cubierta: TO220

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IRF9612 Datasheet (PDF)

 ..1. Size:447K  international rectifier
irf9610 irf9611 irf9612 irf9613.pdf

IRF9612
IRF9612

 8.1. Size:1337K  international rectifier
irf9610pbf.pdf

IRF9612
IRF9612

PD- 95413IRF9610PbF Lead-Freewww.irf.com 106/15/04IRF9610PbF2 www.irf.comIRF9610PbFwww.irf.com 3IRF9610PbF4 www.irf.comIRF9610PbFwww.irf.com 5IRF9610PbF6 www.irf.comIRF9610PbFwww.irf.com 7IRF9610PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

 8.2. Size:161K  international rectifier
irf9610.pdf

IRF9612
IRF9612

 8.3. Size:288K  international rectifier
irf9610s.pdf

IRF9612
IRF9612

PD - 95694IRF9610SPbF Lead-Free9/1/04Document Number: 91081 www.vishay.com1IRF9610SPbFDocument Number: 91081 www.vishay.com2IRF9610SPbFDocument Number: 91081 www.vishay.com3IRF9610SPbFDocument Number: 91081 www.vishay.com4IRF9610SPbFDocument Number: 91081 www.vishay.com5IRF9610SPbFDocument Number: 91081 www.vishay.com6IRF9610SPbFPeak Diode Re

 8.4. Size:286K  samsung
irf9610 irf9611.pdf

IRF9612
IRF9612

 8.5. Size:170K  vishay
irf9610s sihf9610s.pdf

IRF9612
IRF9612

IRF9610S, SiHF9610SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200Definition Surface MountRDS(on) ()VGS = - 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 7.0 P-Channel Fast SwitchingQgd (nC) 4.0 Ease of ParallelingConfiguration Single Si

 8.6. Size:190K  vishay
irf9610 sihf9610.pdf

IRF9612
IRF9612

IRF9610, SiHF9610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 P-ChannelAvailableRDS(on) ()VGS = - 10 V 3.0 Fast SwitchingRoHS*Qg (Max.) (nC) 11COMPLIANT Ease of ParallelingQgs (nC) 7.0 Simple Drive RequirementsQgd (nC) 4.0 Lead (Pb)-free AvailableConfiguration SingleDESCRIPTIONSThe Power MOS

Otros transistores... IRF9540NL , IRF9540NS , IRF9541 , IRF9542 , IRF9543 , IRF9610 , IRF9610S , IRF9611 , IRF640N , IRF9613 , IRF9620 , IRF9620S , IRF9621 , IRF9622 , IRF9623 , IRF9630 , IRF9630S .

 

 
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