2SK768
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK768
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 500
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 10
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 70
nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1
Ohm
Paquete / Cubierta:
TO3PN
- Selección de transistores por parámetros
2SK768
Datasheet (PDF)
..1. Size:237K inchange semiconductor
2sk768.pdf 
isc N-Channel MOSFET Transistor 2SK768DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve
9.4. Size:234K inchange semiconductor
2sk767.pdf 
isc N-Channel MOSFET Transistor 2SK767DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver
9.5. Size:234K inchange semiconductor
2sk769.pdf 
isc N-Channel MOSFET Transistor 2SK769DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve
9.6. Size:237K inchange semiconductor
2sk764a.pdf 
isc N-Channel MOSFET Transistor 2SK764ADESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conv
9.7. Size:234K inchange semiconductor
2sk762.pdf 
isc N-Channel MOSFET Transistor 2SK762DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver
9.8. Size:234K inchange semiconductor
2sk766.pdf 
isc N-Channel MOSFET Transistor 2SK766DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver
9.9. Size:235K inchange semiconductor
2sk765.pdf 
isc N-Channel MOSFET Transistor 2SK765DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conv
9.10. Size:242K inchange semiconductor
2sk765a.pdf 
isc N-Channel MOSFET Transistor 2SK765ADESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, con
9.11. Size:237K inchange semiconductor
2sk764.pdf 
isc N-Channel MOSFET Transistor 2SK764DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve
9.12. Size:235K inchange semiconductor
2sk763.pdf 
isc N-Channel MOSFET Transistor 2SK763DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver
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History: IRFP141
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| 2SK2329S
| WM05P02G
| MMN400A010U1
| JCS2N60MFB