2SK768 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK768
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 500
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 10
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 70
nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1
Ohm
Paquete / Cubierta:
TO3PN
Búsqueda de reemplazo de 2SK768 MOSFET
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Selección ⓘ de transistores por parámetros
2SK768 PDF Specs
..1. Size:237K inchange semiconductor
2sk768.pdf 
isc N-Channel MOSFET Transistor 2SK768 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
9.4. Size:234K inchange semiconductor
2sk767.pdf 
isc N-Channel MOSFET Transistor 2SK767 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
9.5. Size:234K inchange semiconductor
2sk769.pdf 
isc N-Channel MOSFET Transistor 2SK769 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
9.6. Size:237K inchange semiconductor
2sk764a.pdf 
isc N-Channel MOSFET Transistor 2SK764A DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conv... See More ⇒
9.7. Size:234K inchange semiconductor
2sk762.pdf 
isc N-Channel MOSFET Transistor 2SK762 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
9.8. Size:234K inchange semiconductor
2sk766.pdf 
isc N-Channel MOSFET Transistor 2SK766 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
9.9. Size:235K inchange semiconductor
2sk765.pdf 
isc N-Channel MOSFET Transistor 2SK765 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conv... See More ⇒
9.10. Size:242K inchange semiconductor
2sk765a.pdf 
isc N-Channel MOSFET Transistor 2SK765A DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, con... See More ⇒
9.11. Size:237K inchange semiconductor
2sk764.pdf 
isc N-Channel MOSFET Transistor 2SK764 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
9.12. Size:235K inchange semiconductor
2sk763.pdf 
isc N-Channel MOSFET Transistor 2SK763 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
Otros transistores... 2SK735
, 2SK738-Z
, 2SK762
, 2SK762A
, 2SK764
, 2SK764A
, 2SK765
, 2SK765A
, IRF520
, 2SK769
, 2SK1225
, 2SK1244
, 2SK1246
, 2SK1248
, 2SK1249
, 2SK1250
, 2SK1261
.
History: SI7431DP
| 2SK735