IRF9620 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9620
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRF9620 MOSFET
IRF9620 datasheet
irf9620pbf.pdf
PD- 95414 IRF9620PbF Lead-Free www.irf.com 1 06/16/04 IRF9620PbF 2 www.irf.com IRF9620PbF www.irf.com 3 IRF9620PbF 4 www.irf.com IRF9620PbF www.irf.com 5 IRF9620PbF 6 www.irf.com IRF9620PbF www.irf.com 7 IRF9620PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13
irf9620 sihf9620.pdf
IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available P-Channel RDS(on) ( )VGS = - 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 22 COMPLIANT Ease of Paralleling Qgs (nC) 12 Qgd (nC) 10 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC S DESCRIPTION T
irf9620 irf9621 irf9622 irf9623.pdf
IRF9620, IRF9621, S E M I C O N D U C T O R IRF9622, IRF9623 -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, July 1998 P-Channel Power MOSFETs Features Description -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 1.5 and 2.4 MOSFETs designed, tested, and guaranteed to withst
Otros transistores... IRF9541 , IRF9542 , IRF9543 , IRF9610 , IRF9610S , IRF9611 , IRF9612 , IRF9613 , 10N60 , IRF9620S , IRF9621 , IRF9622 , IRF9623 , IRF9630 , IRF9630S , IRF9631 , IRF9632 .
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