2SK3366
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3366
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 20
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5
V
trⓘ - Tiempo de subida: 420
nS
Cossⓘ - Capacitancia
de salida: 250
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021
Ohm
Paquete / Cubierta:
TO251
Búsqueda de reemplazo de MOSFET 2SK3366
2SK3366
Datasheet (PDF)
..1. Size:354K inchange semiconductor
2sk3366.pdf 
isc N-Channel MOSFET Transistor 2SK3366FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R =21m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri
0.1. Size:223K renesas
2sk3366-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.2. Size:286K inchange semiconductor
2sk3366-z.pdf
isc N-Channel MOSFET Transistor 2SK3366-ZFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R =21m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
8.1. Size:230K renesas
2sk3367-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.2. Size:226K renesas
2sk3365-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:116K fuji
2sk3363-01.pdf
FUJI POWER MOS-FET2SK3363-01N-CHANNEL SILICON POWER MOS-FETTO-220AB FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unles
8.4. Size:336K fuji
2sk3362-01.pdf
2SK3362-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25
8.5. Size:115K fuji
2sk3364-01.pdf
FUJI POWER MOS-FET2SK3364-01N-CHANNEL SILICON POWER MOS-FET FeaturesTO-220ABHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters3. SourceMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unles
8.6. Size:289K inchange semiconductor
2sk3364.pdf
isc N-Channel MOSFET Transistor 2SK3364FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.7. Size:355K inchange semiconductor
2sk3367.pdf
isc N-Channel MOSFET Transistor 2SK3367FEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri
8.8. Size:288K inchange semiconductor
2sk3362.pdf
isc N-Channel MOSFET Transistor 2SK3362FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.9. Size:355K inchange semiconductor
2sk3365.pdf
isc N-Channel MOSFET Transistor 2SK3365FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri
8.10. Size:289K inchange semiconductor
2sk3363.pdf
isc N-Channel MOSFET Transistor 2SK3363FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.11. Size:287K inchange semiconductor
2sk3367-z.pdf
isc N-Channel MOSFET Transistor 2SK3367-ZFEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
8.12. Size:287K inchange semiconductor
2sk3365-z.pdf
isc N-Channel MOSFET Transistor 2SK3365-ZFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
Otros transistores... 2SK2504TL
, 2SK2513-Z
, 2SK2527-01MR
, 2SK2528-01
, 2SK2561-01R
, 2SK2562-01R
, 2SK3365
, 2SK3365-Z
, CEP83A3
, 2SK3366-Z
, 2SK3367
, 2SK3367-Z
, 2SK3377
, 2SK3377-Z
, 2SK3385
, 2SK3385-Z
, 2SK3386
.
