2SK3367 Todos los transistores

 ..1. Size:355K  inchange semiconductor
 2sk3367.pdf

isc N-Channel MOSFET Transistor 2SK3367 FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri

 0.1. Size:230K  renesas
 2sk3367-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:287K  inchange semiconductor
 2sk3367-z.pdf

isc N-Channel MOSFET Transistor 2SK3367-Z FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.1. Size:223K  renesas
 2sk3366-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:226K  renesas
 2sk3365-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:116K  fuji
 2sk3363-01.pdf

FUJI POWER MOS-FET 2SK3363-01 N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) 3. Source DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25 C unles

 8.4. Size:336K  fuji
 2sk3362-01.pdf

2SK3362-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25

 8.5. Size:115K  fuji
 2sk3364-01.pdf

FUJI POWER MOS-FET 2SK3364-01 N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25 C unles

 8.6. Size:289K  inchange semiconductor
 2sk3364.pdf

isc N-Channel MOSFET Transistor 2SK3364 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.7. Size:286K  inchange semiconductor
 2sk3366-z.pdf

isc N-Channel MOSFET Transistor 2SK3366-Z FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R =21m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.8. Size:288K  inchange semiconductor
 2sk3362.pdf

isc N-Channel MOSFET Transistor 2SK3362 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.9. Size:355K  inchange semiconductor
 2sk3365.pdf

isc N-Channel MOSFET Transistor 2SK3365 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R =14m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri

 8.10. Size:289K  inchange semiconductor
 2sk3363.pdf

isc N-Channel MOSFET Transistor 2SK3363 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 6.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.11. Size:354K  inchange semiconductor
 2sk3366.pdf

isc N-Channel MOSFET Transistor 2SK3366 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R =21m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri

 8.12. Size:287K  inchange semiconductor
 2sk3365-z.pdf

isc N-Channel MOSFET Transistor 2SK3365-Z FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R =14m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d