2SK3386-Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3386-Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 34 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 310 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: TO252

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2SK3386-Z datasheet

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2SK3386-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SK3386-Z

isc N-Channel MOSFET Transistor 2SK3386-Z FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 21m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

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2SK3386-Z

isc N-Channel MOSFET Transistor 2SK3386 FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 21m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.1. Size:188K  toshiba
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2SK3386-Z

2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 3.8 m (typ.) High forward transfer admittance Yfs = 70 S (typ.) Low leakage current IDSS = 100 A (VDS = 30 V) Enhancement mode Vth = 2.0 t

Otros transistores... 2SK3366-Z, 2SK3367, 2SK3367-Z, 2SK3377, 2SK3377-Z, 2SK3385, 2SK3385-Z, 2SK3386, IRF540N, 2SK4143-S17-AY, 2SK4144, 2SK4144-AZ, 2SK4144-S12-AZ, 2SK4145-S19-AY, 2SK4146-S19-AY, 2SK4147, 2SK4161D