2SK4143-S17-AY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK4143-S17-AY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.5 V
Qgⓘ - Carga de la puerta: 18 nC
trⓘ - Tiempo de subida: 8.6 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET 2SK4143-S17-AY
2SK4143-S17-AY Datasheet (PDF)
2sk4143-s17-ay.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4143.pdf
isc N-Channel MOSFET Transistor 2SK4143FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk4145.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK4145SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low on-state resistance RDS(on) = 10 m MAX. (VGS = 10 V, ID = 42 A) Low input capacitance Ciss = 5300 pF TYP. ORDERING INFORMATION PART NUMBER LEAD PLATING
2sk4144-az.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4147.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4145-s19-ay.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4146-s19-ay.pdf
Preliminary Data Sheet R07DS0130EJ01002SK4146 Rev.1.00Sep 24, 2010MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 10.1 m MAX. (VGS = 10 V, ID = 40 A) Low input capacitance Ciss = 3500 pF TYP. (VDS = 10 V) Ordering
2sk4145.pdf
isc N-Channel MOSFET Transistor 2SK4145FEATURESStatic drain-source on-resistance:RDS(on) 10mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 V
2sk4144-az.pdf
isc N-Channel MOSFET Transistor 2SK4144-AZFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk4146.pdf
isc N-Channel MOSFET Transistor 2SK4146FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 10.1m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk414.pdf
isc N-Channel MOSFET Transistor 2SK414DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching.High Cutoff frequency.No secondary breakdown.Suitable for switching re
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918