2SK448 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK448
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: TO3
Búsqueda de reemplazo de MOSFET 2SK448
2SK448 Datasheet (PDF)
2sk448.pdf
Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine
2sk444.pdf
Ordering number:EN1420AN-Channel Junction Silicon FET2SK444Video Camera ApplicationsFeatures Package Dimensions Large yfs.unit:mm Small Ciss.2034A Ultralow noise figure.[2SK444] High frequency, low noise amplifier.2.24.00.40.50.40.41 : Source1 2 31.3 1.32 : Gate3 : DrainSANYO : SPA3.03.8nomSpecificationsAbsolute Maximum Rat
2sk443.pdf
Ordering number:EN1419BN-Channel Junction Silicon FET2SK443Video Camera First-Stage ApplicationsFeatures Package Dimensions Large yfs.unit:mm Small Crss.2050A Ultralow noise figure.[2SK443] Ultrasmall-sized package permitting 2SK443-appliedsets to be small-sized. 0.40.1630 to 0.11 0.95 20.951.92.91 : Source2 : Drain3 : GateSANYO :
2sk445.pdf
Ordering number:EN1439BN-Channel Junction Silicon FET2SK445Video Camera 1st Stage ApplicationsFeatures Package Dimensions Large yfs.unit:mm Small Ciss.2005C Ultralow noise figure.[2SK445] High frequency, low-frequency, low noise amplifier.5.04.04.00.450.50.440.451 : Drain2 : Source3 : Gate1 2 3JEDEC : TO-92EIAJ : SC-43SANYO : S
2sk447.pdf
isc N-Channel MOSFET Transistor 2SK447FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.24(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F