2SK448 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK448

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: TO3

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2SK448 datasheet

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 2sk448.pdf pdf_icon

2SK448

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 9.1. Size:92K  sanyo
 2sk444.pdf pdf_icon

2SK448

Ordering number EN1420A N-Channel Junction Silicon FET 2SK444 Video Camera Applications Features Package Dimensions Large yfs . unit mm Small Ciss. 2034A Ultralow noise figure. [2SK444] High frequency, low noise amplifier. 2.2 4.0 0.4 0.5 0.4 0.4 1 Source 1 2 3 1.3 1.3 2 Gate 3 Drain SANYO SPA 3.0 3.8nom Specifications Absolute Maximum Rat

 9.2. Size:95K  sanyo
 2sk443.pdf pdf_icon

2SK448

Ordering number EN1419B N-Channel Junction Silicon FET 2SK443 Video Camera First-Stage Applications Features Package Dimensions Large yfs . unit mm Small Crss. 2050A Ultralow noise figure. [2SK443] Ultrasmall-sized package permitting 2SK443-applied sets to be small-sized. 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Source 2 Drain 3 Gate SANYO

 9.3. Size:89K  sanyo
 2sk445.pdf pdf_icon

2SK448

Ordering number EN1439B N-Channel Junction Silicon FET 2SK445 Video Camera 1st Stage Applications Features Package Dimensions Large yfs . unit mm Small Ciss. 2005C Ultralow noise figure. [2SK445] High frequency, low-frequency, low noise amplifier. 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Drain 2 Source 3 Gate 1 2 3 JEDEC TO-92 EIAJ SC-43 SANYO S

MOSTRAR MÁS

Otros transistores... 2SK4144-S12-AZ, 2SK4145-S19-AY, 2SK4146-S19-AY, 2SK4147, 2SK4161D, 2SK422, 2SK425, 2SK433, IRFB4227, 2SK484, 2SK490, 2SK1030A, 2SK1032, 2SK1032A, 2SK1038, 2SK1039, 2SK1040