2SK1030A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1030A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   tonⓘ - Tiempo de encendido: 55 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO220FP

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2SK1030A Datasheet (PDF)

..1. Size:64K fuji
2sk1030 2sk1030a.pdf

8.1. Size:34K panasonic
2sk1033.pdf

Power F-MOS FETs 2SK10332SK1033Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on) = 0.45(typ)5.5 0.2 2.7 0.2High-speed switching : tf =180ns(typ)No secondary breakdown3.1 0.1Low-voltage drive ApplicationsDC-DC converter1.3 0.21.4 0.1Non-contact relay+0.20.5 -0.1Solenoid drive0.8 0.1Mot

8.2. Size:33K panasonic
2sk1036.pdf

Power F-MOS FETs 2SK10362SK1036Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)= 0.23(typ)5.5 0.2 2.7 0.2High-speed switching : tf = 80ns(typ)No secondary breakdown3.1 0.1 ApplicationsDC-DC converter1.3 0.2Non-contact relay1.4 0.1Solenoid drive+0.20.5 -0.1 0.8 0.1Motor drive2.54 0.

8.3. Size:35K panasonic
2sk1035.pdf

Power F-MOS FETs 2SK10352SK1035Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)= 0.2(typ)5.5 0.2 2.7 0.2High-speed switching : tf = 100ns(typ)No secondary breakdown3.1 0.1Low-voltage drive ApplicationsDC-DC converter 1.3 0.21.4 0.1Non-contact relay+0.20.5 -0.1Solenoid drive0.8 0.1Motor

8.4. Size:69K fuji
2sk1032 2sk1032a.pdf

8.5. Size:61K inchange semiconductor
2sk1039.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1039 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GSV Gate-Source Volta

8.6. Size:61K inchange semiconductor
2sk1038.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1038 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GSV Gate-Source Volta

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 2SK1053

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