2SK1030A Todos los transistores

 

2SK1030A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1030A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 55* nS

Conductancia de drenaje-sustrato (Cd): 110 pF

Resistencia drenaje-fuente RDS(on): 5 Ohm

Empaquetado / Estuche: TO220FP

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2SK1030A Datasheet (PDF)

1.1. 2sk1030 2sk1030a.pdf Size:64K _update

2SK1030A



4.1. 2sk1032 2sk1032a.pdf Size:69K _update

2SK1030A



4.2. 2sk1039.pdf Size:61K _update

2SK1030A
2SK1030A

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1039 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta

 4.3. 2sk1038.pdf Size:61K _update

2SK1030A
2SK1030A

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1038 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta

4.4. 2sk1035.pdf Size:35K _panasonic

2SK1030A
2SK1030A

Power F-MOS FETs 2SK1035 2SK1035 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on)= 0.2?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf = 100ns(typ) No secondary breakdown o3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Motor drive 2.54

 4.5. 2sk1036.pdf Size:33K _panasonic

2SK1030A
2SK1030A

Power F-MOS FETs 2SK1036 2SK1036 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on)= 0.23?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf = 80ns(typ) No secondary breakdown o3.1 0.1 Applications DC-DC converter 1.3 0.2 Non-contact relay 1.4 0.1 Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive 2.54 0.25 5.08 0.5

4.6. 2sk1033.pdf Size:34K _panasonic

2SK1030A
2SK1030A

Power F-MOS FETs 2SK1033 2SK1033 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on) = 0.45?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf =180ns(typ) No secondary breakdown o3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Motor drive 2.54

4.7. 2sk1039.pdf Size:201K _inchange_semiconductor

2SK1030A
2SK1030A

isc N-Channel MOSFET Transistor 2SK1039 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V =400V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 4

4.8. 2sk1038.pdf Size:201K _inchange_semiconductor

2SK1030A
2SK1030A

isc N-Channel MOSFET Transistor 2SK1038 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =400V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 4

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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