2SK1059-Z Todos los transistores

 ..1. Size:277K  nec
 2sk1059-z.pdf

 7.1. Size:280K  nec
 2sk1059.pdf

 8.1. Size:72K  1
 2sk105.pdf

 8.2. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

 8.3. Size:106K  sanyo
 2sk1053.pdf

Ordering number EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 Gate 0.8 0.4 2 Drain 1 2 3 3 Source EIAJ SC-46 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings at Ta = 25 C

 8.4. Size:104K  sanyo
 2sk1052.pdf

Ordering number EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 Gate 0.8 0.4 2 Drain 1 2 3 3 Source EIAJ SC-46 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings at Ta = 25 C

 8.5. Size:85K  renesas
 rej03g0906 2sk1056 2sk1057 2sk1058.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:40K  hitachi
 2sk1056 2sk1057 2sk1058.pdf

2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier

 8.7. Size:55K  hitachi
 2sk1057 2sk1058.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.8. Size:53K  interfet
 2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf

Databook.fxp 1/14/99 2 03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK17 2SK40 2SK59 2SK105 Japanese IFN17 IFN40 IFN59 IFN105 InterFET NJ16 NJ16 NJ16 NJ16 Process Unit N N N N Parameters Conditions Limit Channel Channel Channel Channel V BVGSS IG = 1.0 A 20 50 30 50 Min nA 0.10 1.0 1.0 1.0 IGSS VGS = ( )

 8.9. Size:200K  inchange semiconductor
 2sk1053.pdf

isc N-Channel MOSFET Transistor 2SK1053 DESCRIPTION Drain Current I =1A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela

 8.10. Size:200K  inchange semiconductor
 2sk1052.pdf

isc N-Channel MOSFET Transistor 2SK1052 DESCRIPTION Drain Current I =0.5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and re