2SK1064 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1064

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 145* nS

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de MOSFET 2SK1064

2SK1064 Datasheet (PDF)

1.1. 2sk1064.pdf Size:44K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1064 DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ f

1.2. 2sk1064.pdf Size:194K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1064 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equ

4.1. 2sk1060-z.pdf Size:299K _update

4.2. 2sk1063.pdf Size:44K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1063 DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ f

4.3. 2sk1061.pdf Size:293K _toshiba

2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications • Excellent switching times: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs • Low on resistance: R = 0.6 ? (typ.) DS (ON) • Enhancement-mode • Complementary to 2SJ

4.4. 2sk1062.pdf Size:333K _toshiba

2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Unit: mm Analog Switching Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs @I = 50 mA D • Low on resistance: R = 0.6 ? (typ.) @ I = 50 mA DS (ON) D • Enhancement

4.5. 2sk1065.pdf Size:42K _sanyo

Ordering number:ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions � Ultrasmall package facilitates miniaturization in end unit:mm products. 2057A � Small Crss (Crss=0.04pF typ). [2SK1065] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Gate 2 : Drain 3 : Source SANYO : MCP Specification

4.6. 2sk1066.pdf Size:302K _sanyo

Ordering number:EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions � High-frequency general-purpose amplifier. unit:mm � AM tuner RF amplifier. 2058 � Low-noise amplifier. [2SK1066] 0.3 Features 0.15 3 � Large ? yfs? . 0 to 0.1 � Small Crss. � Ultralow noise figure. � Ultrasmall-sized packag

4.7. 2sk1068.pdf Size:94K _sanyo

Ordering number:EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications Package Dimensions � Impedance conversion. unit:mm � Infrared sensor. 2058 [2SK1068] Features 0.3 � Small IGSS. 0.15 3 � Small Crss. 0 to 0.1 � Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. 1 2 0.3 0.6 0.65 0.65 0.9 2.0

4.8. 2sk1067.pdf Size:143K _sanyo

Ordering number:EN2719 N-Channel Silicon MOSFET 2SK1067 FM Tuner, VHF-Band Amplifier Applications Features Package Dimensions � Low noise NF=1.8dB typ (f=100MHz). unit:mm � High power gain PG=27dB typ (f=100MHz). 2057 � Small reverse transfer capacitance Crss=0.035pF [2SK1067] (VDS=10V, f=1MHz). � Ultrasmall-sized package (MCP) permitting 0.3 0.15 2SK1067-applied sets to be made

4.9. 2sk1069.pdf Size:98K _sanyo

Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions � Low-frequency general-purpose amplifiers. unit:mm � Ideal for use in variable resistors, analog switches, 2058 low-frequency amplifiers, and constant-current [2SK1069] circuits. 0.3 0.15 3 Features 0 to 0.1 � Adoption of FBET proc

4.10. 2sk1060.pdf Size:302K _nec

4.11. 2sk1063.pdf Size:194K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1063 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equ

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