2SK2329S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2329S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 145 nS
Cossⓘ - Capacitancia de salida: 540 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de 2SK2329S MOSFET
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2SK2329S datasheet
2sk2329s-l.pdf
2SK2329 L , 2SK2329 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 3 Low on resistance High speed switching 2, 4 12 Low drive current 3 2.5 V gate drive device can be driven from 1 3 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maxim
2sk2329.pdf
2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package co
rej03g1008 2sk2329lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... 2SK1039, 2SK1040, 2SK1059-Z, 2SK1060-Z, 2SK1063, 2SK1064, 2SK2320, 2SK2328, 2N7002, 2SK2407, 2SK2563, 2SK258, 2SK258H, 2SK259, 2SK260, 2SK260H, 2SK3402
History: VS3638GA | PHT6N03LT
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