2SK3432-S Todos los transistores

 

2SK3432-S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3432-S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 83 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1800 nS
   Cossⓘ - Capacitancia de salida: 2200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO262

 Búsqueda de reemplazo de MOSFET 2SK3432-S

 

2SK3432-S Datasheet (PDF)

 0.1. Size:206K  renesas
2sk3432-s-z-zj.pdf

2SK3432-S 2SK3432-S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:184K  toshiba
2sk3439.pdf

2SK3432-S 2SK3432-S

2SK3439 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3439 DC-DC Converter Applications Unit: mmRelay Drive and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 3.8 m (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to

 8.2. Size:207K  toshiba
2sk3438.pdf

2SK3432-S 2SK3432-S

2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance: RDS (ON) = 0.74 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0~5.0 V (VDS =

 8.3. Size:221K  toshiba
2sk3437.pdf

2SK3432-S 2SK3432-S

2SK3437 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3437 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance: RDS (ON) = 0.74 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0~5.0 V (VDS =

 8.4. Size:206K  renesas
2sk3434-s-z-zj.pdf

2SK3432-S 2SK3432-S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:206K  renesas
2sk3435-s-z-zj.pdf

2SK3432-S 2SK3432-S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:206K  renesas
2sk3431-s-z-zj.pdf

2SK3432-S 2SK3432-S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:46K  nec
2sk3435.pdf

2SK3432-S 2SK3432-S

PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3435SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3435 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3435 TO-220AB2SK3435-S TO-262FEATURES2SK3435-Z TO-220SMD Super low on-state resistance:RDS(on)1 = 14 m

 8.8. Size:48K  nec
2sk3430.pdf

2SK3432-S 2SK3432-S

PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3430SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3430 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3430 TO-220AB2SK3430-S TO-262FEATURES2SK3430-Z TO-220SMD Super low on-state resistance:RDS(on)1 = 7.3 m

 8.9. Size:75K  nec
2sk3433-s-z-zj.pdf

2SK3432-S 2SK3432-S

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3433SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3433 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3433 TO-220AB2SK3433-S TO-262FEATURES2SK3433-ZJ TO-263 Super low on-state resistance:2SK3433-Z TO-220SMDNoteRDS(on)1 = 26 m MAX.

 8.10. Size:994K  kexin
2sk3434-zj.pdf

2SK3432-S 2SK3432-S

SMD Type MOSFETN-Channel MOSFET2SK3434-ZJ Features VDS S = 60V ID = 48 A (VGS = 10V) RDS(ON) 20m (VGS = 10V) RDS(ON) 31m (VGS = 4V) Low Ciss: Ciss = 2100 pF TYP.DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage

 8.11. Size:995K  kexin
2sk3430-zj.pdf

2SK3432-S 2SK3432-S

SMD Type MOSFETN-Channel MOSFET2SK3430-ZJ Features VDS S = 40V ID = 80 A (VGS = 10V) RDS(ON) 7.3m (VGS = 10V) RDS(ON) 15m (VGS = 4V) Low Ciss: Ciss = 2800 pF TYP.DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-Source Voltage

 8.12. Size:357K  inchange semiconductor
2sk3431-z.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3431-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.13. Size:357K  inchange semiconductor
2sk3435-z.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3435-ZFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.14. Size:356K  inchange semiconductor
2sk3437b.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3437BFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.15. Size:289K  inchange semiconductor
2sk3431.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3431FEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.16. Size:283K  inchange semiconductor
2sk3434-s.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3434-SFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.17. Size:288K  inchange semiconductor
2sk3433.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3433FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.18. Size:282K  inchange semiconductor
2sk3435-s.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3435-SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.19. Size:289K  inchange semiconductor
2sk3434.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3434FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.20. Size:282K  inchange semiconductor
2sk3433-s.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3433-SFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.21. Size:283K  inchange semiconductor
2sk3431-s.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3431-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.22. Size:288K  inchange semiconductor
2sk3435.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3435FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.23. Size:222K  inchange semiconductor
2sk3430-z.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3430-ZFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 8.24. Size:357K  inchange semiconductor
2sk3434-z.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3434-ZFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.25. Size:356K  inchange semiconductor
2sk3433-z.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3433-ZFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.26. Size:282K  inchange semiconductor
2sk3430-s.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3430-SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.27. Size:288K  inchange semiconductor
2sk3430.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3430FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.28. Size:282K  inchange semiconductor
2sk3437k.pdf

2SK3432-S 2SK3432-S

isc N-Channel MOSFET Transistor 2SK3437KFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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