2SK1512-01 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1512-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 120 nS
Cossⓘ - Capacitancia de salida: 200 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de 2SK1512-01 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK1512-01 datasheet
8.1. Size:97K renesas
rej03g0947 2sk1517ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.2. Size:84K renesas
2sk1517.pdf
2SK1517, 2SK1518 Silicon N Channel MOS FET REJ03G0947-0200 (Previous ADE-208-1287) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod
8.3. Size:84K renesas
2sk1515.pdf
2SK1515, 2SK1516 Silicon N Channel MOS FET REJ03G0946-0200 (Previous ADE-208-1286) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod
8.4. Size:83K renesas
2sk1519 2sk1520.pdf
2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod
8.5. Size:97K renesas
rej03g0946 2sk1515ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:1474K fuji
2sk1511.pdf
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8.7. Size:203K inchange semiconductor
2sk1516.pdf
isc N-Channel MOSFET Transistor 2SK1516 ESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
8.8. Size:200K inchange semiconductor
2sk1519.pdf
isc N-Channel MOSFET Transistor 2SK1519 ESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
8.9. Size:202K inchange semiconductor
2sk1518.pdf
isc N-Channel MOSFET Transistor 2SK1518 ESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
8.10. Size:202K inchange semiconductor
2sk1517.pdf
isc N-Channel MOSFET Transistor 2SK1517 ESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
8.11. Size:202K inchange semiconductor
2sk1515.pdf
isc N-Channel MOSFET Transistor 2SK1515 ESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
Otros transistores... 2SK1483C, 2SK1493-Z, 2SK1494-Z, 2SK1495-Z, 2SK1496-Z, 2SK1503, 2SK1503-01, 2SK1511, 8N60, 2SK2639-01, 2SK2641-01, 2SK2643-01, 2SK2646-01, 2SK2649-01R, 2SK2652-01, 2SK2653-01R, 2SK2687-01
