2SK2646-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2646-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 35 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET 2SK2646-01

2SK2646-01 Datasheet (PDF)

..1. Size:32K fuji
2sk2646-01.pdf

FUJI POWER MOSFET2SK2646-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(

8.1. Size:71K fuji
2sk2643-01.pdf

FUJI POWER MOSFET2SK2643-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=

8.2. Size:296K fuji
2sk2640-01mr.pdf

N-channel MOS-FET2SK2640-01MRFAP-IIS Series 500V 0,9 10A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteri

8.3. Size:73K fuji
2sk2647.pdf

FUJI POWER MOSFET2SK2647-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic

8.4. Size:75K fuji
2sk2641-01.pdf

FUJI POWER MOSFET2SK2641-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=

8.5. Size:90K fuji
2sk2642-01mr.pdf

2SK2642-01MR FUJI POWER MOS-FETN-CHANNEL SILICON POWER MOS-FETTO-220F15FeaturesHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=35V GuaranteeAvalanche-proof2.54Applications3. SourceSwitching regulatorsUPS DC-DC convertersEquivalent circuit schematicGeneral purpose power amplifierDrain(D)Maximum ratings and char

8.6. Size:312K fuji
2sk2645 01mr.pdf

N-channel MOS-FET2SK2645-01MRFAP-IIS Series 600V 1,2 9A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris

8.7. Size:270K fuji
2sk2649-01r.pdf

N-channel MOS-FET2SK2649-01RFAP-IIS Series 800V 1,5 9A 100W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris

8.8. Size:72K fuji
2sk2648.pdf

FUJI POWER MOSFET2SK2648-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=

8.9. Size:224K inchange semiconductor
2sk2645.pdf

isc N-Channel MOSFET Transistor 2SK2645FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSHigh speed SwitchingRepetitive Avalanche ratedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,Switching Regulators,General PurposePower AmplifierABSOLUTE MAXIMUM RATINGS(T

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