2SK2687-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2687-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 55 nS
Conductancia de drenaje-sustrato (Cd): 1300 pF
Resistencia entre drenaje y fuente RDS(on): 0.01 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET 2SK2687-01
2SK2687-01 Datasheet (PDF)
2sk2687-01.pdf
2SK2687-01FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unle
2sk2682ls.pdf
Ordering number : ENN6783A2SK2682LSN-Channel Silicon MOSFET2SK2682LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed diode. 2078C Micaless package facilitating mounting.[2SK2682LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220FI(LS)
2sk2682.pdf
Ordering number : ENN67832SK2682N-Channel Silicon MOSFET2SK2682Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed diode. 2078B Micaless package facilitating mounting.[2SK2682]4.510.02.83.20.91.20.70.751 : Gate1 2 3 2 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220FI-LSAbsolute
2sk2684.pdf
2SK2684(L), 2SK2684(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1022-0200 (Previous: ADE-208-542) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code:
rej03g1022 2sk2684lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2688-01l-01s.pdf
2SK2688-01L,SFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeatures Outline DrawingsT-Pack(L)High speed switching T-Pack(S)Low on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-typeS-typeEIAJMaximum ratings and characteristicsAbso
2sk2689-01mr.pdf
2SK2689-01MRFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unl
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
