2SK775 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK775

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 450 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 50 pF

Resistencia drenaje-fuente RDS(on): 3.5 Ohm

Empaquetado / Estuche: TO220AB

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2SK775 Datasheet (PDF)

1.1. 2sk775.pdf Size:671K _update

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5.1. 2sk777.pdf Size:39K _update

5.2. 2sk770.pdf Size:62K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK770 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RAT

5.3. 2sk774.pdf Size:154K _update

5.4. 2sk773.pdf Size:145K _update

5.5. 2sk776.pdf Size:38K _update

5.6. 2sk771.pdf Size:79K _sanyo

Ordering number:EN2391 N-Channel Junction Silicon FET 2SK771 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions � Variable resistors, analog switches, AF amplifier, unit:mm constant-current circuit. 2050A [2SK771] Features 0.4 0.16 � Adoption of FBET process. 3 � Ultrasmall-sized package permitting sets to be made 0 to 0.1 smaller and slimmer.

5.7. 2sk772.pdf Size:77K _sanyo

Ordering number:EN2392A N-Channel Junction Silicon FET 2SK772 AF Amplifier Applications Applications Package Dimensions � Variable resistors, analog switches, AF amplifier, unit:mm constant-current circuit. 2034A [2SK772] 2.2 4.0 Features � Adoption of FBET process. 0.4 0.5 0.4 0.4 1 2 3 1 : Source 1.3 1.3 2 : Gate 3 : Drain 3.0 3.8nom SANYO : SPA Specifications Absolut

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