2SK790 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK790
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 150 W
Tensión drenaje-fuente |Vds|: 500 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 1000 pF
Resistencia drenaje-fuente RDS(on): 0.4 Ohm
Empaquetado / Estuche: TO3PN
Búsqueda de reemplazo de MOSFET 2SK790
2SK790 Datasheet (PDF)
0.1. 2sk790.pdf 
Size:247K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK790DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve
9.1. 2sk799.pdf Size:3136K _1
9.2. 2sk792.pdf Size:43K _toshiba
9.3. 2sk793.pdf Size:43K _toshiba
9.4. 2sk791.pdf Size:101K _toshiba
9.5. 2sk794.pdf Size:43K _toshiba
9.6. 2sk795.pdf Size:145K _panasonic
"2SK795""2SK795"
9.7. 2sk796-a.pdf Size:71K _panasonic
9.8. 2sk796a.pdf Size:197K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK796ADESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.9. 2sk796.pdf Size:197K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK796DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.10. 2sk793.pdf Size:237K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK793DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =850V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, convert
9.11. 2sk794.pdf Size:204K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK794DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
