IRF9641 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF9641
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 90(max) nC
   trⓘ - Tiempo de subida: 15(max) nS
   Cossⓘ - Capacitancia de salida: 450(max) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO220

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IRF9641 Datasheet (PDF)

..1. Size:490K samsung
irf9240 irf9241 irf9242 irf9243 irfp9240 irfp9241 irfp9242 irfp9243 irf9640 irf9641 irf9642 irf9643.pdf

8.1. Size:170K international rectifier
irf9640.pdf

8.2. Size:170K international rectifier
irf9640s.pdf

8.3. Size:999K international rectifier
irf9640spbf.pdf

PD - 95117AIRF9640SPbF Lead-Free06/09/05Document Number: 91087 www.vishay.com1IRF9640SPbFDocument Number: 91087 www.vishay.com2IRF9640SPbFDocument Number: 91087 www.vishay.com3IRF9640SPbFDocument Number: 91087 www.vishay.com4IRF9640SPbFDocument Number: 91087 www.vishay.com5IRF9640SPbFDocument Number: 91087 www.vishay.com6IRF9640SPbFPeak Diode

8.4. Size:2131K international rectifier
irf9640pbf.pdf

PD - 94981IRF9640PbF Lead-Free02/04/04Document Number: 91086 www.vishay.com1IRF9640PbFDocument Number: 91086 www.vishay.com2IRF9640PbFDocument Number: 91086 www.vishay.com3IRF9640PbFDocument Number: 91086 www.vishay.com4IRF9640PbFDocument Number: 91086 www.vishay.com5IRF9640PbFDocument Number: 91086 www.vishay.com6IRF9640PbFTO-220AB Package O

8.5. Size:103K fairchild semi
irf9640 rf1s9640sm.pdf

IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

8.6. Size:519K samsung
irfp9240-43 irf9240-43 irf9640-43.pdf

8.7. Size:196K vishay
irf9640pbf sihf9640.pdf

IRF9640, SiHF9640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Fast SwitchingQgs (nC) 7.1 Ease of ParallelingQgd (nC) 27 Simple Drive RequirementsConfiguration Single Compliant to RoHS Direc

8.8. Size:169K vishay
irf9640s sihf9640s irf9640l sihf9640l.pdf

IRF9640S, SiHF9640S, IRF9640L, SiHF9640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200 Definition Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 44 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 7.1 P-ChannelQgd (nC) 27 Fast Switching

8.9. Size:192K vishay
irf9640l irf9640lpbf.pdf