2SK1385-01R Todos los transistores

 ..1. Size:175K  fuji
 2sk1385-01r.pdf

 7.1. Size:204K  inchange semiconductor
 2sk1385.pdf

isc N-Channel MOSFET Transistor 2SK1385 DESCRIPTION Drain Current I =9A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 800 V DSS GS

 8.1. Size:442K  toshiba
 2sk1381.pdf

2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- -MOSIII) 2SK1381 Relay Drive, Motor Drive and DC-DC Converter Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 25 m (typ.) DS (ON) High forward transfer admittance Y = 33 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode

 8.2. Size:371K  toshiba
 2sk1380.pdf

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 8.3. Size:389K  toshiba
 2sk1382.pdf

2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSIII) 2SK1382 Relay Drive, Motor Drive and DC-DC Converter Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 15 m (typ.) DS (ON) High forward transfer admittance Y = 47 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhancement-m

 8.4. Size:171K  fuji
 2sk1386-01.pdf

 8.5. Size:171K  fuji
 2sk1384r.pdf

 8.6. Size:168K  fuji
 2sk1388.pdf

N-channel MOS-FET 2SK1388 F-III Series 30V 0,022 35A 60W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

 8.7. Size:64K  inchange semiconductor
 2sk1384.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1384 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage 20 V ID D

 8.8. Size:203K  inchange semiconductor
 2sk1386.pdf

isc N-Channel MOSFET Transistor 2SK1386 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor