2SK1548-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1548-01MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5.5 Ohm
Paquete / Cubierta: TO220F
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2SK1548-01MR Datasheet (PDF)
2sk1548.pdf
isc N-Channel MOSFET Transistor 2SK1548DESCRIPTIONDrain Current I =3.5A@ T =25D CDrain Source Voltage-: V =900 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV Drain-Source Voltage (V
2sk1549-r.pdf
FUJI POWER MOSFET2SK1549-RN-CHANNEL SILICON POWER MOSFETF- I SERIESOutline DrawingsFeaturesHigh speed switching5.50.30.30.2Low on-resistance 15.53.23.2+0.3Low driving powerHigh voltageApplications0.32.10.3 1.6 Switching regulators+0.2 1.10.1UPS0.2 3.50.20.25.45 5.45 0.6+0.2 DC-DC convertersGeneral purpose power amplifi
2sk1544.pdf
2SK1544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII.5) 2SK1544 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.15 (typ.) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current : I = 300 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1
2sk1540.pdf
2SK1540(L), 2SK1540(S) Silicon N Channel MOS FET REJ03G0952-0200 (Previous: ADE-208-1292) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Pac
2sk1547.pdf
isc N-Channel MOSFET Transistor 2SK1547DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =800 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV Drain-Source Voltage (V =0
2sk1544.pdf
isc N-Channel MOSFET Transistor 2SK1544DESCRIPTIONDrain Current I =25A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen
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