2SK3479-ZJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3479-ZJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 83 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO263

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2SK3479-ZJ datasheet

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2SK3479-ZJ

isc N-Channel MOSFET Transistor 2SK3479-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 5.1. Size:357K  inchange semiconductor
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2SK3479-ZJ

isc N-Channel MOSFET Transistor 2SK3479-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 6.1. Size:205K  renesas
 2sk3479-s-z-zj.pdf pdf_icon

2SK3479-ZJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.2. Size:283K  inchange semiconductor
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2SK3479-ZJ

isc N-Channel MOSFET Transistor 2SK3479-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

MOSTRAR MÁS

Otros transistores... 2SK2727, 2SK2729, 2SK2730, 2SK3468-01, 2SK3474-01, 2SK3479, 2SK3479-S, 2SK3479-Z, IRF9540N, 2SK349, 2SK350, 2SK3501-01, 2SK3504-01, 2SK3889-01L, 2SK3889-01S, 2SK3889-01SJ, 2SK3891-01R