2SK349 Todos los transistores

 ..1. Size:49K  hitachi
 2sk349 2sk350.pdf

 ..2. Size:235K  inchange semiconductor
 2sk349.pdf

isc N-Channel MOSFET Transistor 2SK349 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching. Suitable for switchingregulator, DC DC control. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMET

 0.1. Size:35K  1
 2sk3492.pdf

Ordering number ENN8279 2SK3492 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3492 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 8 A Drai

 0.2. Size:114K  toshiba
 2sk3497.pdf

2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3497 High Power Amplifier Application Unit mm High breakdown voltage VDSS = 180V Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 180 V 1. GATE Gate-source voltage VGSS 12 V 2. DRAIN (HEAT SINK) DC (Note 1) ID

 0.3. Size:220K  toshiba
 2sk3499.pdf

2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3499 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode

 0.4. Size:161K  toshiba
 2sk3498.pdf

2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSV) 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON-resistance RDS (ON) = 4.0 (typ.) High forward transfer admittance Yfs = 0.6 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 400 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS

 0.5. Size:29K  sanyo
 2sk3491.pdf

Ordering number ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Low Qg. 2083B [2SK3491] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP Package Dimensions unit mm 2092B [2SK3491] 6.5 2.3 5.0 0.5 4 0.

 0.6. Size:27K  sanyo
 2sk3495.pdf

Ordering number ENN6970 2SK3495 N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2087A 4V drive. [2SK3495] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate Specifications 2.54 2.54 Absolute Maximum Ratings a

 0.7. Size:73K  panasonic
 2sk3494.pdf

Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET Features Unit mm 4.6 0.2 10.5 0.3 Low on-resistance, low Qg 1.4 0.1 High avalanche resistance Applications For PDP 1.4 0.1 2.5 0.2 For high-speed switching 0.8 0.1 2.54 0.3 0 to 0.3 Absolute Maximum Ratings TC = 25 C (10.2) (8.9) Parameter Symbol Rating Unit 1 2 3 Drain-source surr

 0.8. Size:117K  fuji
 2sk3496-01mr.pdf

2SK3496-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless oth

 0.9. Size:286K  inchange semiconductor
 2sk3491d.pdf

isc N-Channel MOSFET Transistor 2SK3491D FEATURES Drain Current I = 1A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 11 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.10. Size:286K  inchange semiconductor
 2sk3497.pdf

isc N-Channel MOSFET Transistor 2SK3497 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 180V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.11. Size:287K  inchange semiconductor
 2sk3492d.pdf

isc N-Channel MOSFET Transistor 2SK3492D FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.12. Size:355K  inchange semiconductor
 2sk3492i.pdf

isc N-Channel MOSFET Transistor 2SK3492I FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.13. Size:354K  inchange semiconductor
 2sk3491i.pdf

isc N-Channel MOSFET Transistor 2SK3491I FEATURES Drain Current I = 1A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 11 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid