2SK350 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK350DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-

2SK3506 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3506 Relay Drive and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 16 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement model: Vth = 1.5 to

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3503N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR HIGH SPEED SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The 2SK3503 is an N-channel vertical MOS FET. Because itcan be driven by a voltage as low as 1.5 V and it is not 0.3 0.050.1+0.10.05necessary to consider a drive current, this FET is ideal as anactuator for low-current porta

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3507SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3507 is N-channel MOS FET device that features PART NUMBER PACKAGE a low on-state resistance and excellent switching characteristics, 2SK3507-ZK TO-252 (MP-3ZK)designed for low voltage high current applications such as DC/DC converter with synchronous rect

FUJI POWER MOSFET2SK3502-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline DrawingsTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwis

FUJI POWER MOSFET2003032SK3504-01N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

FUJI POWER MOSFET2SK3505-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline DrawingsTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwis

2SK3501-01FUJI POWER MOSFET200303N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

FUJI POWER MOSFET2003032SK3505-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

2SK3508-01MRFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless oth

SMD Type MOSFETN-Channel MOSFET2SK3503SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 VDS (V) = 16VDrain ID = 100 mA (VGS = 1.5V) RDS(ON) 50 (VGS = 1.5V) 3Body0.30.05 RDS(ON) 15 (VGS = 2.5V)Gate Diode+0.10.5-0.1 RDS(ON) 12 (VGS = 4V)1. Gate2. SourceSource3. Drain

isc N-Channel MOSFET Transistor 2SK3504FEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.46(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3506FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3502-01MRFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

Isc N-Channel MOSFET Transistor 2SK3505FEATURESWith To-220F packagingLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 5

isc N-Channel MOSFET Transistor 2SK3501FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno