IRF9952 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9952
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1(min) VQgⓘ - Carga de la puerta: 6.9 nC
trⓘ - Tiempo de subida: 8.8 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET IRF9952
IRF9952 Datasheet (PDF)
irf9952.pdf
PD - 9.1561AIRF9952PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE T1 8 N-Ch P-ChS1 D1 Ultra Low On-Resistance2 7 Dual N and P Channel MOSFETG1 D1 Surface Mount VDSS 30V -30V3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching LossesP -CH AN N EL M OSFETRDS(on) 0.10 0.25 Fully Avalanche RatedT op V iewRecommended upgrade:
irf9952pbf.pdf
PD - 95135IRF9952PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8N-Ch P-ChS1 D1l Ultra Low On-Resistance2 7l Dual N and P Channel MOSFETG1 D1l Surface Mount VDSS 30V -30V3 6S2 D2l Very Low Gate Charge and4 5G2 D2Switching LossesP-CHANNEL MOSFETRDS(on) 0.10 0.25l Fully Avalanche RatedTop Viewl Lead-FreeRecommended upgrade:
auirf9952q.pdf
AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH1 8S1 D1 Low On-Resistance 2 7G1 D1 Logic Level Gate Drive VDSS 30V -30V3 6S2 D2 Dual N and P Channel MOSFET 45G2 D2RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 3.5A -2.3A
irf9952qpbf.pdf
PD - 96115IRF9952QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETl Ultra Low On-Resistance 1 8N-Ch P-ChS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6l Available in Tape & ReelS2 D2l 150C Operating Temperature4 5G2 D2l Automotive [Q101] QualifiedP-CHANNEL MOSFETRDS(on) 0.10 0.25l Lead-FreeTop V
irf9953.pdf
PD - 9.1560AIRF9953PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -30V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching Losses RDS(on) = 0.25 Fully Avalanche RatedT op V iewDescriptionFifth Generation HEXFETs from International RectifierRecommended upgrade
irf9956.pdf
PD - 9.1559AIRF9956PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 30V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching LossesRDS(on) = 0.10 Fully Avalanche RatedT op V iewDescriptionFifth Generation HEXFETs from International RectifierRecommended upgrad
irf9953pbf.pdf
PD - 95477IRF9953PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P-Channel MOSFETVDSS = -30V2 7G1 D1l Surface Mount3l Very Low Gate Charge and 6S2 D2Switching Losses4 5G2 D2RDS(on) = 0.25l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International RectifierRecommended
irf9956pbf.pdf
PD - 95259IRF9956PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual N-Channel MOSFETVDSS = 30V2 7l Surface Mount G1 D1l Very Low Gate Charge and 3 6S2 D2Switching Losses4 5G2 D2RDS(on) = 0.10l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International RectifierRecommended upg
Otros transistores... IRF9631 , IRF9632 , IRF9633 , IRF9640 , IRF9640S , IRF9641 , IRF9642 , IRF9643 , IRF1010E , IRF9953 , IRF9Z10 , IRF9Z12 , IRF9Z14 , IRF9Z14S , IRF9Z15 , IRF9Z20 , IRF9Z22 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F