2SK3891-01R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3891-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless othe

isc N-Channel MOSFET Transistor 2SK3891-01RFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs 2SK3892Silicon N-channel power MOSFETFor contactless relay, diving circuit for a solenoid,driving circuit for a motor, control equipment andswitching power supply Package Code Features TO-220D-A1 Pin Name Gate-source surrender voltage VGSS : 30 guaranteed 1: Gate Avalanc

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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SMD Type MOSFETMOS Field Effect Transistor2SK3899TO-263Unit: mm+0.24.57-0.2+0.11.27-0.1FeaturesLow On-state resistanceRDS(on)1 =5.3mMAX. (VGS =10 V, ID =42A)+0.10.1max1.27-0.1RDS(on)2 =6.5 mMAX. (VGS =4.5 V, ID =42A)Low C iss: Ciss = 5500 pF TYP. +0.10.81-0.12.541Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Rating

isc N-Channel MOSFET Transistor 2SK3892FEATURESDrain Current : I = 22A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 62m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK3899-ZKFEATURESDrain Current : I = 84A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.3m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno