2SK3891-01R Datasheet. Equivalente

 ..1. Size:102K  fuji
 2sk3891-01r.pdf

2SK3891-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless othe

 ..2. Size:274K  inchange semiconductor
 2sk3891-01r.pdf

isc N-Channel MOSFET Transistor 2SK3891-01R FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 8.1. Size:306K  1
 2sk3892.pdf

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply Package Code Features TO-220D-A1 Pin Name Gate-source surrender voltage VGSS 30 guaranteed 1 Gate Avalanc

 8.2. Size:241K  toshiba
 2sk389.pdf

 8.3. Size:280K  renesas
 2sk3899-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:150K  no
 3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf

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 8.5. Size:43K  kexin
 2sk3899.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3899 TO-263 Unit mm +0.2 4.57-0.2 +0.1 1.27-0.1 Features Low On-state resistance RDS(on)1 =5.3m MAX. (VGS =10 V, ID =42A) +0.1 0.1max 1.27-0.1 RDS(on)2 =6.5 m MAX. (VGS =4.5 V, ID =42A) Low C iss Ciss = 5500 pF TYP. +0.1 0.81-0.1 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2Drain 3 Source Absolute Maximum Rating

 8.6. Size:279K  inchange semiconductor
 2sk3892.pdf

isc N-Channel MOSFET Transistor 2SK3892 FEATURES Drain Current I = 22A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

 8.7. Size:357K  inchange semiconductor
 2sk3899-zk.pdf

isc N-Channel MOSFET Transistor 2SK3899-ZK FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.3m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno