2SK3902-ZK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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isc N-Channel MOSFET Transistor 2SK3902-ZK FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 21m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3904 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.2 (typ.) High forward transfer admittance Yfs = 9.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Abso

2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3907 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Low drain-source ON resistance RDS (ON) = 0.18 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 500 A (VDS = 500 V) Enhancement model Vth =

2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II -MOS VI) 2SK3906 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Fast reverse recovery time trr = 400 ns (typ.) Low drain-source ON-resistance RDS (ON) = 0.27 (typ.) High forward transfer admittance Yfs = 15S (typ.) Low leakage current IDSS

2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3903 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.32 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Abs

2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3905 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.25 (typ.) High forward transfer admittance Yfs = 8.2 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Abs

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP) FEATURES Super low on-state resistance (TO-263) RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP) FEATURES Super low on-state resistance (TO-263) RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3901 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3901 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3901-ZK TO-263 (MP-25ZK) FEATURES Super low On-state resistance (TO-263) RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 30 A) RDS(

isc N-Channel MOSFET Transistor 2SK3904 FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3900-ZP FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.0m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3907 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.23 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3906 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.33 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3903 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.44 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3905 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.31 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3901-ZK FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi