2SK3774-01S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3774-01S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 270 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.5 nS

Cossⓘ - Capacitancia de salida: 335 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: TO263

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2SK3774-01S datasheet

 ..1. Size:357K  inchange semiconductor
 2sk3774-01s.pdf pdf_icon

2SK3774-01S

isc N-Channel MOSFET Transistor 2SK3774-01S FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 0.1. Size:357K  inchange semiconductor
 2sk3774-01sj.pdf pdf_icon

2SK3774-01S

isc N-Channel MOSFET Transistor 2SK3774-01SJ FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 4.1. Size:146K  fuji
 2sk3774-01l-s-sj.pdf pdf_icon

2SK3774-01S

2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T

 4.2. Size:283K  inchange semiconductor
 2sk3774-01l.pdf pdf_icon

2SK3774-01S

isc N-Channel MOSFET Transistor 2SK3774-01L FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

MOSTRAR MÁS

Otros transistores... 2SK3889-01S, 2SK3889-01SJ, 2SK3891-01R, 2SK3899-ZK, 2SK3900-ZP, 2SK3901-ZK, 2SK3902-ZK, 2SK3774-01L, IRF1010E, 2SK3774-01SJ, 2SK903MR, 2SK930, 2SK943, 2SK944, 2SK945, 2SK949M, 2SK874