2SK3774-01S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3774-01S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 270 W
Voltaje máximo drenador - fuente |Vds|: 300 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 32 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Tiempo de subida (tr): 7.5 nS
Conductancia de drenaje-sustrato (Cd): 335 pF
Resistencia entre drenaje y fuente RDS(on): 0.13 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET 2SK3774-01S
2SK3774-01S Datasheet (PDF)
2sk3774-01s.pdf
isc N-Channel MOSFET Transistor 2SK3774-01SFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
2sk3774-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3774-01SJFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
2sk3774-01l-s-sj.pdf
2SK3774-01L,S,SJN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(T
2sk3774-01l.pdf
isc N-Channel MOSFET Transistor 2SK3774-01LFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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