2SK930 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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Ordering number:EN2841N-Channel Junction Silicon FET2SK932High-FrequencyLow-Noise Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier, low-noise amplifier. unit:mm2050AFeatures [2SK932] Adoption of FBET process.0.40.16 Large yfs .3 Small Ciss.0 to 0.1 Ultralow noise figure. Ultrasmall-sized package permitting 2SK

Ordering number:EN3006N-Channel Junction Silicon FET2SK937High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Large yfs .2019B Small Ciss.[2SK937]5.04.04.00.450.50.440.451 : Source2 : Gate3 : Drain1 2 3JEDEC : TO-92EIAJ : SC-431.3 1.3SANYO : NPSpecificationsAbsolu

Ordering number : EN2841B2SK932N-Channel JFEThttp://onsemi.com15V, 7.3 to 24mA, 50mS, CPApplications AM tuner RF amplifier, low-noise amplifierFeatures Adoption of FBET process Large yfs | | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmerSpecificationsAbsolute Maximum Ratings

isc N-Channel MOSFET Transistor 2SK935DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 300 VDSS GSV Gate-Source

isc N-Channel MOSFET Transistor 2SK934DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VDSS GSV Gate-Source