2SK930 Todos los transistores

 ..1. Size:170K  isahaya
 2sk930.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub

 9.1. Size:91K  sanyo
 2sk932.pdf

Ordering number EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions AM tuner RF amplifier, low-noise amplifier. unit mm 2050A Features [2SK932] Adoption of FBET process. 0.4 0.16 Large yfs . 3 Small Ciss. 0 to 0.1 Ultralow noise figure. Ultrasmall-sized package permitting 2SK

 9.2. Size:79K  sanyo
 2sk937.pdf

Ordering number EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm Large yfs . 2019B Small Ciss. [2SK937] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Source 2 Gate 3 Drain 1 2 3 JEDEC TO-92 EIAJ SC-43 1.3 1.3 SANYO NP Specifications Absolu

 9.3. Size:1048K  onsemi
 2sk932.pdf

Ordering number EN2841B 2SK932 N-Channel JFET http //onsemi.com 15V, 7.3 to 24mA, 50mS, CP Applications AM tuner RF amplifier, low-noise amplifier Features Adoption of FBET process Large yfs Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer Specifications Absolute Maximum Ratings

 9.4. Size:48K  no
 2sk932 2sk937 2sk968 2sk998 2sk1000.pdf

 9.5. Size:200K  inchange semiconductor
 2sk935.pdf

isc N-Channel MOSFET Transistor 2SK935 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 300 V DSS GS V Gate-Source

 9.6. Size:200K  inchange semiconductor
 2sk934.pdf

isc N-Channel MOSFET Transistor 2SK934 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V DSS GS V Gate-Source