2SK945 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK945
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: SC64

Búsqueda de reemplazo de MOSFET 2SK945

2SK945 Datasheet (PDF)

..1. Size:203K toshiba
2sk945.pdf

9.1. Size:138K 1
2sk948.pdf

Discontinued product.Discontinued product.Discontinued product.

9.2. Size:3231K 1
2sk946.pdf

9.3. Size:233K 1
2sk947-m.pdf

9.4. Size:135K 1
2sk949-mr.pdf

9.5. Size:540K toshiba
2sk944.pdf

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9.6. Size:60K toshiba
2sk943.pdf

9.7. Size:130K fuji
2sk947.pdf

9.8. Size:134K fuji
2sk949m.pdf

"2SK949M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M"Powered by ICminer.com Electronic-Library Service CopyRight 2003

9.9. Size:67K no
2sk940.pdf

9.10. Size:63K no
2sk941.pdf

9.11. Size:304K inchange semiconductor
2sk948.pdf

isc N-Channel MOSFET Transistor 2SK948FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.12. Size:203K inchange semiconductor
2sk944.pdf

isc N-Channel MOSFET Transistor 2SK944DESCRIPTIONDrain Current I =22A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 V

9.13. Size:279K inchange semiconductor
2sk947-mr.pdf

isc N-Channel MOSFET Transistor 2SK947-MRFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

9.14. Size:278K inchange semiconductor
2sk949-mr.pdf

isc N-Channel MOSFET Transistor 2SK949-MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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